METHOD OF INSPECTING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
    3.
    发明申请
    METHOD OF INSPECTING SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME 有权
    检查半导体器件的方法和使用其制造半导体器件的方法

    公开(公告)号:US20160204041A1

    公开(公告)日:2016-07-14

    申请号:US14988991

    申请日:2016-01-06

    CPC classification number: H01L22/12 H01L27/11565 H01L27/11582

    Abstract: A method of inspecting a semiconductor device includes providing a substrate, on which a mold layer with a plurality of mold openings is provided, milling the mold layer in a direction inclined at a predetermined angle with respect to a direction normal to a top surface of the substrate, such that an inclined cutting surface exposing milled mold openings is formed, the milled mold openings including first milling openings along a first column extending in a first direction and having different heights, obtaining image data of the cutting surface, the image data including first contour images of the first milling openings, and obtaining a first process parameter, which represents an extent of bending of the mold openings according to a distance from a top surface of the substrate, using positions of center points of the first contour images.

    Abstract translation: 一种检查半导体器件的方法包括提供一个衬底,在其上提供具有多个模具开口的模具层,在相对于垂直于该顶部表面的方向倾斜预定角度的方向上铣削模具层 基板,使得形成露出铣削模具开口的倾斜切割表面,所述铣削模具开口包括沿着第一方向延伸并具有不同高度的第一列的第一铣削开口,获得切割表面的图像数据,所述图像数据包括第一 并且使用第一轮廓图像的中心点的位置获得第一加工参数,该第一加工参数代表与基材顶表面距离的距离的模具开口的弯曲程度。

    APPARATUS AND METHOD FOR MEASURING THICKNESS

    公开(公告)号:US20170363418A1

    公开(公告)日:2017-12-21

    申请号:US15464896

    申请日:2017-03-21

    Abstract: Disclosed are apparatuses and methods for measuring a thickness. The apparatus for measuring a thickness including a light source that emits a femto-second laser, an optical coupler through which a portion of the femto-second laser is incident onto a target and other portion of the femto-second laser is incident onto a reference mirror, a detector configured to receive a reflection signal reflected on the reference mirror and a sample signal generated from the target and configured to measure a thickness of the target based on an interference signal between the reflection signal and the sample signal, and a plurality of optical fiber lines configured to connect the light source, the optical coupler, and the detector to each other may be provided.

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