公开(公告)号：US20170107616A1

公开(公告)日：2017-04-20

申请号：US15262544

申请日：2016-09-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-young SHIM ,  Eun-sung KIM ,  Chul-hwan CHOI ,  Chung-hwan KIM

IPC: C23C16/455 ,  B08B15/00 ,  B08B7/00 ,  B08B9/08 ,  H01L21/033 ,  B08B5/00

CPC classification number: B08B15/00 ,  B08B7/0035 ,  H01J37/32862 ,  H01L21/0337

Abstract: Provided are a method of fabricating a semiconductor The method of fabricating a semiconductor device includes: transporting a substrate having a carbon-based sacrificial layer pattern to a processing chamber; forming a mask material layer on the substrate; removing the substrate from the processing chamber; and removing at least a part of a carbon-based material layer formed inside the processing chamber.