公开(公告)号：US20180358070A1

公开(公告)日：2018-12-13

申请号：US15965830

申请日：2018-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOONJONG SONG ,  KILHO LEE ,  DAEEUN JEONG

IPC: G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/1659 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Disclosed are a magnetic memory device and a method of fabricating the same. The magnetic memory device comprises a bottom electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer that are sequentially stacked on the bottom electrode, and a top electrode on the magnetic tunnel junction pattern. The bottom electrode comprises a first bottom electrode and a second bottom electrode on the first bottom electrode. Each of the first and second bottom electrodes comprises metal nitride. The first bottom electrode has a crystallinity higher than that of the second bottom electrode.