公开(公告)号：US20200083429A1

公开(公告)日：2020-03-12

申请号：US16202360

申请日：2018-11-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： KILHO LEE ,  GWANHYEOB KOH ,  YOONJONG SONG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic random access memory (MRAM) devices are provided. The MRAM devices may include a magnetic tunnel junction (MTJ) including a free layer and a pinned layer sequentially stacked in a vertical direction and a conductive layer adjacent to the free layer of the MTJ. The conductive layer may include a horizontal portion and first and second protruding portions that protrude away from the horizontal portion and are spaced apart from each other in a horizontal direction that is perpendicular to the vertical direction. A side of the free layer and a side of the horizontal portion may form a straight side.

公开(公告)号：US20200005847A1

公开(公告)日：2020-01-02

申请号：US16262366

申请日：2019-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunsung Jung ,  HYEMIN SHIN ,  YOONJONG SONG ,  JUNG HYUK LEE

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02

Abstract: Disclosed is a memory device. The memory device includes a memory cell array that includes a target cell, a row decoder that drive a word line, and a write driver and sense amplifier that are configured to drive a bit line and a source line. The row decoder is configured to drive the word line in a first program operation and a second program operation. Between a start of the first program operation and an end of the second program operation, the write driver and sense amplifier are configured to continuously drive a bit line connected to the target cell with a second driving voltage or drive a source line connected to the target cell with a third driving voltage.

公开(公告)号：US20180358070A1

公开(公告)日：2018-12-13

申请号：US15965830

申请日：2018-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOONJONG SONG ,  KILHO LEE ,  DAEEUN JEONG

IPC: G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/1659 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Disclosed are a magnetic memory device and a method of fabricating the same. The magnetic memory device comprises a bottom electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer that are sequentially stacked on the bottom electrode, and a top electrode on the magnetic tunnel junction pattern. The bottom electrode comprises a first bottom electrode and a second bottom electrode on the first bottom electrode. Each of the first and second bottom electrodes comprises metal nitride. The first bottom electrode has a crystallinity higher than that of the second bottom electrode.