公开(公告)号：US20190043981A1

公开(公告)日：2019-02-07

申请号：US15869522

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byung Ha Choi ,  Dae Geun Kim ,  Su Min Kim ,  Se Wan Park ,  Ji Ho Lee

IPC: H01L29/78 ,  H01L29/417 ,  H01L21/768 ,  H01L27/088

CPC classification number: H01L29/785 ,  H01L21/76834 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/41791

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

公开(公告)号：US10522682B2

公开(公告)日：2019-12-31

申请号：US15869522

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byung Ha Choi ,  Dae Geun Kim ,  Su Min Kim ,  Se Wan Park ,  Ji Ho Lee

IPC: H01L29/78 ,  H01L21/768 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.