公开(公告)号：US10522682B2

公开(公告)日：2019-12-31

申请号：US15869522

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byung Ha Choi ,  Dae Geun Kim ,  Su Min Kim ,  Se Wan Park ,  Ji Ho Lee

IPC: H01L29/78 ,  H01L21/768 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

公开(公告)号：US20190043981A1

公开(公告)日：2019-02-07

申请号：US15869522

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byung Ha Choi ,  Dae Geun Kim ,  Su Min Kim ,  Se Wan Park ,  Ji Ho Lee

IPC: H01L29/78 ,  H01L29/417 ,  H01L21/768 ,  H01L27/088

CPC classification number: H01L29/785 ,  H01L21/76834 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/41791

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

公开(公告)号：US10854452B2

公开(公告)日：2020-12-01

申请号：US16432053

申请日：2019-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Jo Kim ,  Se Wan Park

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/8234 ,  H01L21/3213

Abstract: A method of manufacturing a semiconductor device includes forming first sacrificial cores on a first region of a lower structure and second sacrificial cores on a second region of the lower structure, forming spacers on side walls of the first sacrificial cores and side walls of the second sacrificial cores, forming a protective pattern covering the second sacrificial cores on the second region of the lower structure, removing the first sacrificial cores from the first region, and etching the lower structure using the spacers on the first region, and the second sacrificial cores and the spacers on the second region. By using only spacers as an etching mask in the first region and the sacrificial cores with the spacers as an etching mask in the second region, patterns with different widths are formed simultaneously on the first and second regions.