公开(公告)号：US20190140163A1

公开(公告)日：2019-05-09

申请号：US16021708

申请日：2018-06-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjun Yun ,  Sang-Kuk Kim ,  Jae Hoon Kim ,  Eunsun Noh ,  Se Chung Oh ,  Sung Chul Lee ,  Daeeun Jeong

IPC: H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22 ,  H01L43/12

Abstract: Magnetic memory devices are provided. A magnetic memory device includes a first electrode on a substrate, a magnetic tunnel junction pattern including a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, which are sequentially stacked on the first electrode, and a second electrode on the magnetic tunnel junction pattern. A surface binding energy of the first electrode and/or the second electrode with respect to the magnetic tunnel junction pattern is relatively low.