SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME

    公开(公告)号:US20240357824A1

    公开(公告)日:2024-10-24

    申请号:US18526285

    申请日:2023-12-01

    IPC分类号: H10B43/35 H10B43/10 H10B43/27

    CPC分类号: H10B43/35 H10B43/10 H10B43/27

    摘要: There is provided a semiconductor memory device having improved reliability. The semiconductor memory device includes a cell substrate, a mold stack including mold insulating layers and gate electrodes, which are alternately stacked on the cell substrate, a semiconductor layer extended in a vertical direction crossing an upper surface of the cell substrate to pass through the mold stack, a blocking insulating pattern between the semiconductor layer and each of the gate electrodes, a charge storage layer including a charge trap portion between the semiconductor layer and the blocking insulating pattern and a first charge blocking portion between the semiconductor layer and each of the mold insulating layers, and a tunnel insulating layer between the semiconductor layer and the charge storage layer, wherein an oxygen concentration of the first charge blocking portion is higher than that of the charge trap portion.