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    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200227435A1

    公开(公告)日：2020-07-16

    申请号：US16686967

    申请日：2019-11-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Min Hwang ,  Joon Sung Lim ,  Woo Sung Yang ,  Dong Sik Lee

    IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11573

    Abstract: A semiconductor device includes gate electrodes spaced apart from each other in a first direction perpendicular to a substrate's upper surface, and extending by different lengths in a second direction perpendicular to the first direction. The device further includes first and second channels penetrating the gate electrodes and extending in the first direction, a horizontal portion disposed in lower portions of the gate electrodes and connecting lower portions of the first and second channels to each other, and a source line disposed in an upper portion of the second channel and connected to the second channel. The gate electrodes include memory cell electrodes included in memory cells, a first ground select electrode disposed in lower portions of the memory cell electrodes, a second ground select electrode disposed in upper portions of the memory cell electrodes, and a string select electrode disposed in upper portions of the memory cell electrodes.

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11139314B2

    公开(公告)日：2021-10-05

    申请号：US16686967

    申请日：2019-11-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Min Hwang ,  Joon Sung Lim ,  Woo Sung Yang ,  Dong Sik Lee

    IPC: H01L27/11582 ,  H01L27/1157 ,  H01L27/11573

    Abstract: A semiconductor device includes gate electrodes spaced apart from each other in a first direction perpendicular to a substrate's upper surface, and extending by different lengths in a second direction perpendicular to the first direction. The device further includes first and second channels penetrating the gate electrodes and extending in the first direction, a horizontal portion disposed in lower portions of the gate electrodes and connecting lower portions of the first and second channels to each other, and a source line disposed in an upper portion of the second channel and connected to the second channel. The gate electrodes include memory cell electrodes included in memory cells, a first ground select electrode disposed in lower portions of the memory cell electrodes, a second ground select electrode disposed in upper portions of the memory cell electrodes, and a string select electrode disposed in upper portions of the memory cell electrodes.

    Memory devices
    5.
    发明授权
    Memory devices 有权

    公开(公告)号：US10128263B2

    公开(公告)日：2018-11-13

    申请号：US15224238

    申请日：2016-07-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seok Cheon Baek ,  Young Woo Kim ,  Dong Sik Lee ,  Min Yong Lee ,  Woong Seop Lee

    IPC: H01L29/76 ,  H01L27/11582 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11568 ,  H01L27/11573 ,  H01L29/06

    Abstract: A memory device may include multiple channel regions extending in a direction perpendicular to an upper surface of a substrate, a plurality of gate electrode layers and a plurality of insulating layers stacked on the substrate to be adjacent at least a portion of the plurality of channel regions, an interlayer insulating layer disposed on the plurality of gate electrode layers, a plurality of cell contact plugs passing through the interlayer insulating layer. Each of the plurality of cell contacts is connected to each of the plurality of gate electrode layers. A vertical insulating layer extends from the interlayer insulating layer disposed between the plurality of channel regions and the plurality of cell contact plugs and has a portion surrounded by at least one of the plurality of gate electrode layers.

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