公开(公告)号：US11024352B2

公开(公告)日：2021-06-01

申请号：US13840723

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyo Min Sohn ,  Dong Su Lee ,  Young Jin Cho ,  Hyung Woo Choi

IPC: G06F13/16 ,  G11C8/00 ,  G11C8/10 ,  G11C11/406

Abstract: A spatial disturbance that occurs when an access is concentrated in a specific memory area in a volatile semiconductor memory like DRAM is properly solved by a memory controller. The memory controller includes a concentration access detection part generating a concentration access detection signal when an address for accessing a specific memory area among memory areas of volatile semiconductor memory is concentratedly received. In the case that the concentration access detection signal is generated, the memory controller includes a controller for easing or preventing corruption of data which memory cells of the specific memory area and/or memory cells of memory areas adjacent to the specific memory area hold.

公开(公告)号：US20180075889A1

公开(公告)日：2018-03-15

申请号：US15811940

申请日：2017-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyo Min Sohn ,  Dong Su Lee ,  Young Jin Cho ,  Hyung Woo Choi

IPC: G11C8/00 ,  G06F13/16 ,  G11C8/10 ,  G11C11/406

CPC classification number: G11C8/00 ,  G06F13/1668 ,  G11C8/10 ,  G11C11/40611

Abstract: A memory cell array may include a normal cell array and a spare cell array, the normal cell array having a plurality of normal memory cells connected to normal lines and the spare memory cell array having a plurality of spare memory cells connected to spare lines configured to replace a failed normal memory cell with a spare memory cell. A spare line address encoding circuit may be configured to generate a spare line address which encodes spare line enable signals being applied when a spare line replacing a normal line is activated to indicate a physical location of the spare line being activated. A spare line adjacent address generator may be configured to generate spare line adjacent address based on the spare line address, and to activate spare lines physically adjacent to the activated spare line.

公开(公告)号：US20210272612A1

公开(公告)日：2021-09-02

申请号：US17308221

申请日：2021-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyo Min Sohn ,  Dong Su Lee ,  Young Jin Cho ,  Hyung Woo Choi

IPC: G11C8/00 ,  G11C8/10 ,  G11C11/406 ,  G06F13/16

Abstract: A spatial disturbance that occurs when an access is concentrated in a specific memory area in a volatile semiconductor memory like DRAM is properly solved by a memory controller. The memory controller includes a concentration access detection part generating a concentration access detection signal when an address for accessing a specific memory area among memory areas of volatile semiconductor memory is concentratedly received. In the case that the concentration access detection signal is generated, the memory controller includes a controller for easing or preventing corruption of data which memory cells of the specific memory area and/or memory cells of memory areas adjacent to the specific memory area hold.

公开(公告)号：US10529395B2

公开(公告)日：2020-01-07

申请号：US15811940

申请日：2017-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyo Min Sohn ,  Dong Su Lee ,  Young Jin Cho ,  Hyung Woo Choi

IPC: G11C8/10 ,  G11C8/00 ,  G11C11/406 ,  G06F13/16

Abstract: A memory cell array may include a normal cell array and a spare cell array, the normal cell array having a plurality of normal memory cells connected to normal lines and the spare memory cell array having a plurality of spare memory cells connected to spare lines configured to replace a failed normal memory cell with a spare memory cell. A spare line address encoding circuit may be configured to generate a spare line address which encodes spare line enable signals being applied when a spare line replacing a normal line is activated to indicate a physical location of the spare line being activated. A spare line adjacent address generator may be configured to generate spare line adjacent address based on the spare line address, and to activate spare lines physically adjacent to the activated spare line.

公开(公告)号：US11817174B2

公开(公告)日：2023-11-14

申请号：US17308221

申请日：2021-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyo Min Sohn ,  Dong Su Lee ,  Young Jin Cho ,  Hyung Woo Choi

IPC: G11C8/10 ,  G11C11/406 ,  G11C8/00 ,  G06F13/16

CPC classification number: G11C8/00 ,  G06F13/1668 ,  G11C8/10 ,  G11C11/40611

Abstract: A spatial disturbance that occurs when an access is concentrated in a specific memory area in a volatile semiconductor memory like DRAM is properly solved by a memory controller. The memory controller includes a concentration access detection part generating a concentration access detection signal when an address for accessing a specific memory area among memory areas of volatile semiconductor memory is concentratedly received. In the case that the concentration access detection signal is generated, the memory controller includes a controller for easing or preventing corruption of data which memory cells of the specific memory area and/or memory cells of memory areas adjacent to the specific memory area hold.