公开(公告)号：US09318168B2

公开(公告)日：2016-04-19

申请号：US14090510

申请日：2013-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul-Woo Park ,  Dong-Soo Kang ,  Su-A Kim ,  Jun-hee Yoo ,  Hak-Soo Yu ,  Jae-Youn Youn ,  Sung-hyun Lee ,  Kyoung-Heon Jeong ,  Hyo-Jin Choi ,  Young-Soo Sohn

IPC: G06F12/02 ,  G11C7/10 ,  G11C29/00

CPC classification number: G11C7/1072 ,  G06F12/0223 ,  G06F12/0292 ,  G11C29/76 ,  G11C29/84

Abstract: In one example embodiment, a memory system includes a memory module and a memory controller. The memory module is configured generate density information of the memory module based on a number of the bad pages of the memory module, the bad pages being pages that have a fault. The memory controller is configured to map a continuous physical address to a dynamic random access memory (dram) address of the memory module based on the density information received from the memory module.

Abstract translation: 在一个示例性实施例中，存储器系统包括存储器模块和存储器控制器。 配置存储器模块基于存储器模块的不良页面的数量生成存储器模块的密度信息，坏页面是具有故障的页面。 存储器控制器被配置为基于从存储器模块接收的密度信息将连续的物理地址映射到存储器模块的动态随机存取存储器（显存）地址。