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    PIXEL ARRAY OF IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    PIXEL ARRAY OF IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220384508A1

    公开(公告)日：2022-12-01

    申请号：US17703217

    申请日：2022-03-24

    申请人： Samsung Electronics Co., Ltd.

    发明人： Dongmin Keum ,  Taehan Kim ,  Bumsuk Kim ,  Junsung Park ,  Kwanghee Lee ,  Yunki Lee

    IPC分类号： H01L27/146 ,  H01L21/66 ,  H04N5/369 ,  H04N5/341

    摘要： A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.

    IMAGE SENSOR INCLUDING AUTO-FOCUS PIXELS
    4.
    发明申请
    IMAGE SENSOR INCLUDING AUTO-FOCUS PIXELS 有权

    公开(公告)号：US20220181372A1

    公开(公告)日：2022-06-09

    申请号：US17507374

    申请日：2021-10-21

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Taesung LEE ,  Dongmin Keum ,  Bumsuk Kim ,  Jinho Kim ,  Junsung Park ,  Kwanghee Lee ,  Dongkyu Lee ,  Yunki Lee

    IPC分类号： H01L27/146 ,  H04N5/232

    摘要： An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.

    IMAGE SENSOR
    7.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230246045A1

    公开(公告)日：2023-08-03

    申请号：US18147092

    申请日：2022-12-28

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Taehan Kim ,  Dongmin Keum ,  Bumsuk Kim ,  Kwanghee Lee ,  Yunki Lee ,  Yeaju Jang

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14621 ,  H01L27/14645 ,  H01L27/14627

    摘要： There is provided an image sensor including first to fourth color filter layers arranged on a substrate and first to seventh microlenses arranged on the first to fourth color filter layers. The first microlenses vertically overlap diagonal components of a first submatrix comprised of green-red subpixels. The second and third group of microlenses vertically overlap off-diagonal components of the first submatrix comprised of green-red subpixels. A horizontal area of each of the second group of microlenses is less than a horizontal area of each of the first microlenses and a horizontal area of each of the third group of microlenses is greater than a horizontal area of each of the first microlenses.