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公开(公告)号:US20240304647A1
公开(公告)日:2024-09-12
申请号:US18180511
申请日:2023-03-08
IPC分类号: H01L27/146 , H04N25/702 , H04N25/703 , H04N25/78
CPC分类号: H01L27/14636 , H01L27/14645 , H04N25/702 , H04N25/703 , H04N25/78 , H04N25/633
摘要: An image sensor may include an image sensor pixel array. The image sensor pixel array may include active image sensor pixels and non-active image sensor pixels. A line of peripheral image sensor pixels may be coupled to a corresponding interconnect structure via a pixel signal path. The pixel signal path may include portions that overlap pass-through pixels and a keep-out region beyond an edge of the image sensor pixel array. Multiple interconnect structures may connect the image sensor pixel array implemented on a first integrated circuit die to pixel control and readout circuitry on a second integrated circuit die.
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公开(公告)号:US12075173B2
公开(公告)日:2024-08-27
申请号:US17782872
申请日:2020-12-08
发明人: Tomohiko Asatsuma , Ryosuke Nakamura , Satoko Iida , Koshi Okita
IPC分类号: H04N25/621 , H01L27/146 , H04N25/585 , H04N25/59 , H04N25/702 , H04N25/77 , H04N25/778
CPC分类号: H04N25/621 , H04N25/702 , H04N25/77
摘要: An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.
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公开(公告)号:US12058457B2
公开(公告)日:2024-08-06
申请号:US17641269
申请日:2020-09-07
发明人: Pooria Mostafalu , Frederick Brady
IPC分类号: H04N25/702 , H01L27/146 , H04N25/75
CPC分类号: H04N25/702 , H01L27/14605 , H04N25/75 , H01L27/14643
摘要: An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.
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公开(公告)号:US11979675B2
公开(公告)日:2024-05-07
申请号:US17728190
申请日:2022-04-25
发明人: Hongyi Mi , Frederick T. Brady , Sungin Han , Pooria Mostafalu
IPC分类号: H04N25/702 , H01L27/146 , H04N25/75 , H04N25/79
CPC分类号: H04N25/702 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14634 , H01L27/14636 , H01L27/14645 , H04N25/79 , H04N25/75
摘要: Image sensing devices are disclosed. In one example, an image sensing device includes a pixel unit cell with both event sensing (EVS) pixels and imaging pixels. The EVS and imaging pixels are configured to include event sensing and imaging pixel transistors formed in the same transistor layer of an integrated circuit assembly that also includes the photodiodes of the EVS and imaging pixels. The photodiodes are separated by a rear deep trench isolation (RDTI), and the EVS and imaging pixel transistors are arranged along (e.g., underneath) boundary areas formed by the RDTI, maximizing the space available for the photodiodes and economizing on wiring requirements for the EVS and imaging pixels.
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公开(公告)号:US11962902B2
公开(公告)日:2024-04-16
申请号:US18185942
申请日:2023-03-17
发明人: Masashi Nakata
IPC分类号: G03B13/36 , G02B7/34 , H01L27/146 , H04N5/265 , H04N23/10 , H04N23/55 , H04N23/67 , H04N25/13 , H04N25/702 , H04N25/704
CPC分类号: H04N23/672 , G02B7/34 , G03B13/36 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14627 , H04N5/265 , H04N23/10 , H04N23/55 , H04N23/67 , H04N25/134 , H04N25/702 , H04N25/704
摘要: The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.
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公开(公告)号:US20240048857A1
公开(公告)日:2024-02-08
申请号:US18489194
申请日:2023-10-18
发明人: Heeryung PARK , Juhyun KO , Jinwoo KIM , Joonyoung PARK , Jongmin YOU
IPC分类号: H04N25/447 , H01L27/146 , H04N25/534 , H04N25/702
CPC分类号: H04N25/447 , H01L27/14623 , H01L27/14641 , H01L27/14627 , H04N25/534 , H04N25/702 , H01L27/14621
摘要: An image sensor includes a Bayer pattern-type pixel array including a plurality of Bayer pattern-type extended blocks each having first to fourth pixel blocks, each of the first to fourth pixel blocks including first to fourth pixels, the first and fourth pixels of the first and fourth pixel blocks being configured to sense green light, the first and fourth pixels of the second and third pixel blocks being configured to sense red light and blue light, respectively, and the second and third pixels of the first to fourth pixel blocks being configured to sense white light, and a signal processing unit merging Bayer pattern color information generated from the first and fourth pixels of the first to fourth pixel blocks, and the Bayer pattern illuminance information generated from the second and third pixels of the first to fourth pixel blocks.
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公开(公告)号:US20240027645A1
公开(公告)日:2024-01-25
申请号:US18263565
申请日:2021-12-23
发明人: ATSUMI NIWA
IPC分类号: G01V8/20 , G01J1/44 , H04N25/47 , H04N25/11 , H04N25/702 , H04N25/707
CPC分类号: G01V8/20 , G01J1/44 , H04N25/47 , H04N25/11 , H04N25/702 , H04N25/707 , G01J2001/448 , G01J2001/446
摘要: A sensing system includes a light emission control unit that controls light emission of a light source by using a light emission pattern determined in advance, a pixel array unit in which pixels that detect a change in a received light amount as an event and generate an event signal indicating presence or absence of detection of the event are two-dimensionally arranged, and a signal corrector that performs correction of the event signal on the basis of the light emission pattern.
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公开(公告)号:US20240022819A1
公开(公告)日:2024-01-18
申请号:US18221816
申请日:2023-07-13
IPC分类号: H04N23/695 , H04N25/702 , H04N23/56 , G06T7/13 , G06T7/20
CPC分类号: H04N23/695 , H04N25/702 , H04N23/56 , G06T7/13 , G06T7/20
摘要: Embodiments are directed to vision systems. Enclosures that each include event scanners, beam generators, or frame cameras may be provided such that the event cameras or the frame cameras may be arranged to provide foveated resolution and such that the enclosures each may include an aperture that enables beams from the beam generators to scan a scene that may be in a field-of-view (FOV) of the aperture. Paths may be scanned across objects in the scene with the beams. Events may be determined based on detection of beam reflections corresponding to objects in the scene. The enclosures may be rotated to orient the apertures into a physical position for continued scanning of the objects within the FOV based on directions of travel for the objects such that the directions of travel for the objects is based on scanned trajectories.
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公开(公告)号:US11869913B2
公开(公告)日:2024-01-09
申请号:US17703217
申请日:2022-03-24
发明人: Dongmin Keum , Taehan Kim , Bumsuk Kim , Junsung Park , Kwanghee Lee , Yunki Lee
IPC分类号: H01L27/146 , H01L21/66 , H04N25/40 , H04N25/702
CPC分类号: H01L27/14627 , H01L22/20 , H01L27/14685 , H04N25/40 , H04N25/702 , H01L27/1463 , H01L27/14621 , H01L27/14645
摘要: A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.
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公开(公告)号:US11832003B2
公开(公告)日:2023-11-28
申请号:US17712171
申请日:2022-04-03
IPC分类号: H04N25/59 , H04N25/75 , H04N25/76 , H04N25/702 , H04N25/46 , H04N25/705 , H04N23/667 , H04N25/701
CPC分类号: H04N25/59 , H04N23/667 , H04N25/46 , H04N25/702 , H04N25/705 , H04N25/75 , H04N25/76 , H04N25/701
摘要: Binnable time-of-flight (ToF) pixels are described, such as for integration with image sensor pixels. Each binnable ToF pixel includes a central dump gate and sub-pixels that are nominally mirror-symmetric and identical around the dump gate. Each sub-pixel includes a photodiode region (or a respective portion of a photodiode region), a storage gate, a storage region, a transfer gate, and a floating diffusion (FD) region. In an array, the binnable ToF pixels are arranged to share FD regions with other binnable ToF pixels of the array. In an un-binned mode, each sub-pixel can integrate photocharge in its storage region until it is time for readout, at which time the photocharges can be transferred to its respective floating diffusion region for individualized readout. In a binned mode, sub-pixels can integrate photocharge directly in their FD regions, which facilitates charge binning of integrated photocharge from all sub-pixels sharing the same FD region.
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