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    PIXEL ARRAY OF IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明申请
    PIXEL ARRAY OF IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220384508A1

    公开(公告)日：2022-12-01

    申请号：US17703217

    申请日：2022-03-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dongmin Keum ,  Taehan Kim ,  Bumsuk Kim ,  Junsung Park ,  Kwanghee Lee ,  Yunki Lee

    IPC: H01L27/146 ,  H01L21/66 ,  H04N5/369 ,  H04N5/341

    Abstract: A pixel array of an image sensor includes a plurality of pixel groups. Each pixel group includes a plurality of unit pixels adjacent to each other and respectively including photoelectric conversion elements disposed in a semiconductor substrate, a color filter shared by the plurality of unit pixels, and a plurality of microlenses disposed on the color filter and having sizes different from each other such that the plurality of microlenses respectively focus an incident light to the photoelectric conversion elements included in the plurality of unit pixels. Deviations of sensing sensitivity of unit pixels are reduced and quality of images captured by the image sensor is enhanced by adjusting sizes of microlenses.

    IMAGE SENSOR INCLUDING AUTO-FOCUS PIXELS
    2.
    发明申请
    IMAGE SENSOR INCLUDING AUTO-FOCUS PIXELS 有权

    公开(公告)号：US20220181372A1

    公开(公告)日：2022-06-09

    申请号：US17507374

    申请日：2021-10-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taesung LEE ,  Dongmin Keum ,  Bumsuk Kim ,  Jinho Kim ,  Junsung Park ,  Kwanghee Lee ,  Dongkyu Lee ,  Yunki Lee

    IPC: H01L27/146 ,  H04N5/232

    Abstract: An image sensor includes a normal pixel, a first auto-focus (AF) pixel, and a second AF pixel, each of the normal pixel, the first AF pixel and the second AF pixel including a photodiode. The image sensor further includes a normal microlens disposed on the normal pixel, and a first AF microlens disposed on the first AF pixel and the second AF pixel. The photodiode of the normal pixel, the photodiode of the first AF pixel, and the photodiode of the second AF pixel are respectively disposed in photo-detecting areas of a semiconductor substrate. A height of the first AF microlens in a vertical direction from a top surface of the semiconductor substrate is greater than a height of the normal microlens in the vertical direction from the top surface of the semiconductor substrate.

    Image sensors
    4.
    发明授权
    Image sensors 有权

    公开(公告)号：US11302733B2

    公开(公告)日：2022-04-12

    申请号：US16132075

    申请日：2018-09-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Min Jang ,  Jungchak Ahn ,  Junsung Park ,  Younggu Jin

    IPC: H01L31/0232 ,  H01L27/146

    Abstract: An image sensor includes a device isolation layer disposed in a substrate and defining pixel regions, and a grid pattern on a surface of the substrate. The grid pattern overlaps the device isolation layer between adjacent pixel regions in a direction perpendicular to the surface. The grid pattern has a width less than a width of the device isolation layer.

    IMAGE SENSOR
    6.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20250022896A1

    公开(公告)日：2025-01-16

    申请号：US18430333

    申请日：2024-02-01

    Applicant: Samsung Electronics Co., LTD

    Inventor： Junsung Park ,  Jonghoon Park ,  Yun Ki Lee

    IPC: H01L27/146

    Abstract: An image sensor includes: a semiconductor substrate including a pixel array region, the pixel array region including a center pixel region and an edge pixel region enclosing the center pixel region in a plan view; color filter groups on the pixel array region, each color filter group of the color filter groups including color filters arranged in a same number of rows and columns; and micro lenses covering the color filter groups, respectively, wherein the color filter groups include center color filter groups on the center pixel region and edge color filter groups on the edge pixel region, and at least two color filters of the color filters in each of the edge color filter groups have thicknesses that are different from each other.

    Image sensor with selective light-shielding for reference pixels
    7.
    发明授权
    Image sensor with selective light-shielding for reference pixels 有权

    公开(公告)号：US11031424B2

    公开(公告)日：2021-06-08

    申请号：US16400094

    申请日：2019-05-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yun Ki Lee ,  Bumsuk Kim ,  Jonghoon Park ,  Junsung Park

    IPC: H01L27/146 ,  H01L31/05 ,  H04N5/369 ,  H04N5/378 ,  H01L31/054

    Abstract: An image sensor includes a photoelectric conversion layer including a plurality of first photoelectric conversion elements and a plurality of second photoelectric conversion elements adjacent to the first photoelectric conversion elements. A light shield layer shields the second photoelectric conversion elements and has respective openings therein that provide light transmission to respective ones of the first photoelectric conversion elements. The image sensor further includes an array of micro-lenses on the photoelectric conversion layer, each of the micro-lenses overlapping at least one of the first photoelectric conversion elements and at least one of the second photoelectric conversion elements.

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