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    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    1.
    发明公开
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20240282800A1

    公开(公告)日：2024-08-22

    申请号：US18441571

    申请日：2024-02-14

    申请人： Samsung Electronics Co., Ltd.

    发明人： Takekazu Shinohara ,  Heetak Han ,  Masato Fujita

    IPC分类号： H01L27/146 ,  H01L21/223 ,  H01L21/762 ,  H01L21/768

    CPC分类号： H01L27/14683 ,  H01L21/2236 ,  H01L21/76224 ,  H01L21/76831 ,  H01L21/76867

    摘要： Provided are an image sensor and a method of manufacturing the image sensor. The method includes forming a pixel isolation trench in a semiconductor substrate to extend from a first surface of the semiconductor substrate to the inside of the semiconductor substrate, forming a sacrificial layer on an inner wall of the pixel isolation trench, implanting a p-type impurity from a surface of the sacrificial layer into the sacrificial layer and the semiconductor substrate by a plasma doping process, a first concentration of the p-type impurity at the surface of the sacrificial layer being greater than a second concentration of the p-type impurity at a sidewall of the pixel isolation trench, removing the sacrificial layer, and forming a pixel isolation structure by forming an insulating liner and a conductive layer sequentially on the inner wall of the pixel isolation trench.

    Image sensor including plurality of auto focusing pixel groups
    2.
    发明授权
    Image sensor including plurality of auto focusing pixel groups 有权

    公开(公告)号：US11671705B2

    公开(公告)日：2023-06-06

    申请号：US17941302

    申请日：2022-09-09

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Eunsub Shim ,  Kyungho Lee ,  Masato Fujita

    IPC分类号： H04N23/67 ,  G03B13/16 ,  H01L27/146

    CPC分类号： H04N23/67 ,  G03B13/16 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14647

    摘要： An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

    Image sensor
    4.
    发明授权
    Image sensor 有权

    公开(公告)号：US11942499B2

    公开(公告)日：2024-03-26

    申请号：US17232735

    申请日：2021-04-16

    申请人： Samsung Electronics Co., Ltd.

    发明人： Masato Fujita ,  Doosik Seol ,  Kyungduck Lee ,  Kyungho Lee ,  Taesub Jung

    IPC分类号： H01L27/146 ,  H04N25/704 ,  H04N25/79

    CPC分类号： H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N25/704 ,  H04N25/79

    摘要： An image sensor includes a pixel array and a logic circuit. The pixel array includes a pixel isolation layer between a plurality of pixels. Each of the plurality of pixels include a pixel circuit below at least one photodiode. The logic circuit acquires a pixel signal from the plurality of pixels. The pixel array includes at least one autofocusing pixel, which includes a first photodiode, a second photodiode, a pixel internal isolation layer between the first and second photodiodes, and a microlens on the first and second photodiodes. The pixel internal isolation layer includes a first pixel internal isolation layer and a second pixel internal isolation layer, separated from each other in a first direction, perpendicular to the upper surface of the substrate, and the first pixel internal isolation layer and the second pixel internal isolation layer include different materials.

    IMAGE SENSOR INCLUDING PLURALITY OF AUTO FOCUSING PIXEL GROUPS
    5.
    发明公开
    IMAGE SENSOR INCLUDING PLURALITY OF AUTO FOCUSING PIXEL GROUPS 审中-公开

    公开(公告)号：US20230262329A1

    公开(公告)日：2023-08-17

    申请号：US18138762

    申请日：2023-04-25

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Eunsub SHIM ,  Kyungho Lee ,  Masato Fujita

    IPC分类号： H04N23/67 ,  G03B13/16 ,  H01L27/146

    CPC分类号： H04N23/67 ,  G03B13/16 ,  H01L27/14612 ,  H01L27/14647 ,  H01L27/14627

    摘要： An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

    Image sensor including photoelectric conversion layer with plural regions that extend under pixel transistors
    6.
    发明授权
    Image sensor including photoelectric conversion layer with plural regions that extend under pixel transistors 有权

    公开(公告)号：US11412166B2

    公开(公告)日：2022-08-09

    申请号：US16745909

    申请日：2020-01-17

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Masato Fujita ,  Kyungho Lee

    IPC分类号： H04N5/374 ,  H04N5/378 ,  H01L27/146

    摘要： An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a transfer gate electrode provided on the first surface of the semiconductor substrate, readout circuit transistors spaced apart from the transfer gate electrode and provided on the first surface of the semiconductor substrate, and a photoelectric conversion layer provided in the semiconductor substrate at a side of the transfer gate electrode and including dopants of a first conductivity type. The photoelectric conversion layer includes a first region having a first thickness and a second region having a second thickness that is less than the first thickness. The second region overlaps with at least a portion of the readout circuit transistors in a direction perpendicular to the first surface of the semiconductor substrate.

    IMAGE SENSOR
    7.
    发明申请
    IMAGE SENSOR 有权

    公开(公告)号：US20220109015A1

    公开(公告)日：2022-04-07

    申请号：US17477232

    申请日：2021-09-16

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Taesub Jung ,  Kyungho Lee ,  Masato Fujita ,  Doosik Seol ,  Kyungduck Lee

    IPC分类号： H01L27/146 ,  H01L27/148

    摘要： An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

    Image sensor
    8.
    发明授权
    Image sensor 有权

    公开(公告)号：US12113084B2

    公开(公告)日：2024-10-08

    申请号：US17477232

    申请日：2021-09-16

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Taesub Jung ,  Kyungho Lee ,  Masato Fujita ,  Doosik Seol ,  Kyungduck Lee

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14831

    摘要： An image sensor is provided. The image sensor includes a first pixel region and a second pixel region located within a semiconductor substrate, a first isolation layer surrounding the first pixel region and the second pixel region, a second isolation layer located between the first pixel region and the second pixel region, and a microlens arranged on the first pixel region and the second pixel region. Each of the first pixel region and the second pixel region include a photoelectric conversion device. The second isolation layer includes at least one first open region that exposes a portion of an area located between the first pixel region and the second pixel region.

    Image sensor including plurality of auto focusing pixel groups
    9.
    发明授权
    Image sensor including plurality of auto focusing pixel groups 有权

    公开(公告)号：US12041348B2

    公开(公告)日：2024-07-16

    申请号：US18138762

    申请日：2023-04-25

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Eunsub Shim ,  Kyungho Lee ,  Masato Fujita

    IPC分类号： H04N23/67 ,  G03B13/16 ,  H01L27/146

    CPC分类号： H04N23/67 ,  G03B13/16 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14647

    摘要： An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.