公开(公告)号：US20190198426A1

公开(公告)日：2019-06-27

申请号：US16033620

申请日：2018-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Jun CHOI ,  Doo Won KWON ,  Kwan Sik KIM ,  Tae Young SONG ,  Sung Hyun YOON

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L21/321 ,  H01L31/02

CPC classification number: H01L23/481 ,  H01L21/3212 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/5329 ,  H01L31/02005

Abstract: A semiconductor device including a via plug formed on a substrate and a metal layer for interconnection formed at an end of the via plug, wherein an insulating structure is under the metal layer for interconnection and the insulating structure has a different layered structure according to a positional relationship with the metal layer for interconnection is disclosed.

公开(公告)号：US20190189671A1

公开(公告)日：2019-06-20

申请号：US16284319

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Doo Won KWON

IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

公开(公告)号：US20190131336A1

公开(公告)日：2019-05-02

申请号：US16018709

申请日：2018-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun YOON ,  Doo Won KWON ,  Kwan Sik KIM ,  Tae Young SONG ,  Min Jun CHOI

IPC: H01L27/146 ,  H01L27/30 ,  H01L27/28 ,  H01L31/024

Abstract: An image sensing apparatus includes a first substrate structure, a second substrate structure, and a memory chip. The first substrate structure includes a pixel region having a photoelectric conversion element. The second substrate structure includes a first surface connected to the first substrate structure and a second surface opposite the first surface, and also includes a circuit region to drive the pixel region. The memory chip is mounted on the second surface of the second substrate structure. The first substrate structure and the second substrate structure are electrically connected by first connection vias passing through the first substrate structure. The second substrate structure and the memory chip are electrically connected by second connection vias passing through a portion of the second substrate structure. The first connection vias and the second connection vias are at different positions on a plane.

公开(公告)号：US20190189672A1

公开(公告)日：2019-06-20

申请号：US16284361

申请日：2019-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Doo Won KWON

IPC: H01L27/146 ,  H04N5/33 ,  H04N9/04

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14652 ,  H04N5/332 ,  H04N9/04

Abstract: A semiconductor device may include a first sensor configured to sense light having a wavelength within a first wavelength range from incident light and generates a first electrical signal based on the sensed light and a second sensor configured to sense light having a wavelength within a second, different wavelength range from the incident light and generates a second electrical signal based on the sensed light. The first and second sensors may be electrically connected to each other via an intermediate connector, and the first sensor and the second sensor may share a pixel circuit that is electrically connected thereto via the intermediate connector. The first and second wavelength ranges may include infra-red and visible wavelength ranges, respectively. The first and second wavelength ranges may include different visible wavelength ranges.

公开(公告)号：US20190103425A1

公开(公告)日：2019-04-04

申请号：US15968954

申请日：2018-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hyun YOON ,  Doo Won KWON ,  Kwan Sik KIM ,  In Gyu BAEK ,  Tae Young SONG

IPC: H01L27/146 ,  H01L23/00 ,  H01L21/768 ,  H01L31/18 ,  H01L21/56 ,  H01L23/522 ,  H01L23/528 ,  H01L21/683

Abstract: A method of manufacturing an image sensing apparatus includes: forming a first substrate structure including a first region of a pixel region, the first substrate structure having a first surface and a second surface; forming a second substrate structure including a circuit region for driving the pixel region, the second substrate structure having a third surface and a fourth surface; bonding the first substrate structure to the second substrate structure, such that the first surface is connected to the third surface; forming a second region of the pixel region on the second surface; forming a first connection via, the first connection via extending from the second surface to pass through the first substrate structure; mounting semiconductor chips on the fourth surface, using a conductive bump; and separating a stack structure of the first substrate structure, the second substrate structure, and the semiconductor chips into unit image sensing apparatuses.