公开(公告)号：US08681545B2

公开(公告)日：2014-03-25

申请号：US13896141

申请日：2013-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Si-Hwan Kim ,  Joon-Suc Jang ,  Duck-Kyeun Woo

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3468

Abstract: To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.

Abstract translation: 为了对半导体存储器件进行编程，通过划分表示存储器单元状态的目标阈值电压来设置多个目标阈值电压组。 目标阈值电压组通过将多个编程电压施加到字线而基本上同时编程。 调整目标阈值电压组的程序结束时间。

公开(公告)号：US20130250680A1

公开(公告)日：2013-09-26

申请号：US13896141

申请日：2013-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Si-Hwan Kim ,  Joon-Suc Jang ,  Duck-Kyeun Woo

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/3468

Abstract: To program a semiconductor memory device, a plurality of target threshold voltage groups are set by dividing target threshold voltages representing states of memory cells. The target threshold voltage groups are substantially simultaneously programmed by applying a plurality of program voltages to a word line. Program end times for the target threshold voltage groups are adjusted.

Abstract translation: 为了对半导体存储器件进行编程，通过划分表示存储器单元状态的目标阈值电压来设置多个目标阈值电压组。 目标阈值电压组通过将多个编程电压施加到字线而基本上同时编程。 调整目标阈值电压组的程序结束时间。