公开(公告)号：US11101269B2

公开(公告)日：2021-08-24

申请号：US17025497

申请日：2020-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Min Yoo ,  Ju Youn Kim ,  Hyung Joo Na ,  Bong Seok Suh ,  Joo Ho Jung ,  Eui Chui Hwang ,  Sung Moon Lee

IPC: H01L27/088 ,  H01L29/40 ,  H01L21/762 ,  H01L29/78

Abstract: A semiconductor device includes a first active pattern extending lengthwise along a first direction and a second active pattern extending lengthwise along the first direction and spaced apart from the first active pattern in the first direction. The device also includes a field insulating film between the first active pattern and the second active pattern. An upper surface of the field insulating film is lower than or coplanar with upper surfaces of the first and second active patterns. The device further includes an element isolation structure in an isolation trench in the first active pattern and the field insulating film. An upper surface of the element isolation structure is higher than the upper surfaces of the first and second active patterns.

公开(公告)号：US11011519B2

公开(公告)日：2021-05-18

申请号：US16368990

申请日：2019-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eui Chul Hwang ,  Ju Youn Kim ,  Hyung Joo Na ,  Bong Seok Suh ,  Sang Min Yoo ,  Joo Ho Jung ,  Sung Moon Lee

IPC: H01L27/092 ,  H01L27/02 ,  H01L29/423 ,  H01L29/08 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/306 ,  H01L21/762 ,  H01L29/66

Abstract: A semiconductor device and a method for fabricating the same, the device including an active pattern extending in a first direction on a substrate; a field insulating film surrounding a part of the active pattern; a first gate structure extending in a second direction on the active pattern and the field insulating film, a second gate structure spaced apart from the first gate structure and extending in the second direction on the active pattern and the field insulating film; and a first device isolation film between the first and second gate structure, wherein a side wall of the first gate structure facing the first device isolation film includes an inclined surface having an acute angle with respect to an upper surface of the active pattern, and a lowermost surface of the first device isolation film is lower than or substantially coplanar with an uppermost surface of the field insulating film.

公开(公告)号：US11784186B2

公开(公告)日：2023-10-10

申请号：US17393025

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Min Yoo ,  Ju Youn Kim ,  Hyung Joo Na ,  Bong Seok Suh ,  Joo Ho Jung ,  Eui Chui Hwang ,  Sung Moon Lee

IPC: H01L27/088 ,  H01L29/40 ,  H01L21/762 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/76224 ,  H01L29/408 ,  H01L29/7846

Abstract: A semiconductor device includes a first active pattern extending lengthwise along a first direction and a second active pattern extending lengthwise along the first direction and spaced apart from the first active pattern in the first direction. The device also includes a field insulating film between the first active pattern and the second active pattern. An upper surface of the field insulating film is lower than or coplanar with upper surfaces of the first and second active patterns. The device further includes an element isolation structure in an isolation trench in the first active pattern and the field insulating film. An upper surface of the element isolation structure is higher than the upper surfaces of the first and second active patterns.

公开(公告)号：US20210265351A1

公开(公告)日：2021-08-26

申请号：US17318133

申请日：2021-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eui Chul Hwang ,  Ju Youn Kim ,  Hyung Joo Na ,  Bong Seok Suh ,  Sang Min Yoo ,  Joo Ho Jung ,  Sung Moon Lee

IPC: H01L27/092 ,  H01L27/02 ,  H01L29/423 ,  H01L29/08 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/306 ,  H01L21/762 ,  H01L29/66

Abstract: A semiconductor device and a method for fabricating the same, the device including an active pattern extending in a first direction on a substrate; a field insulating film surrounding a part of the active pattern; a first gate structure extending in a second direction on the active pattern and the field insulating film, a second gate structure spaced apart from the first gate structure and extending in the second direction on the active pattern and the field insulating film; and a first device isolation film between the first and second gate structure, wherein a side wall of the first gate structure facing the first device isolation film includes an inclined surface having an acute angle with respect to an upper surface of the active pattern, and a lowermost surface of the first device isolation film is lower than or substantially coplanar with an uppermost surface of the field insulating film.

公开(公告)号：US10804265B2

公开(公告)日：2020-10-13

申请号：US16382382

申请日：2019-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Min Yoo ,  Ju Youn Kim ,  Hyung Joo Na ,  Bong Seok Suh ,  Joo Ho Jung ,  Eui Chul Hwang ,  Sung Moon Lee

IPC: H01L27/088 ,  H01L29/40 ,  H01L21/762 ,  H01L29/78

Abstract: A semiconductor device includes a first active pattern extending lengthwise along a first direction and a second active pattern extending lengthwise along the first direction and spaced apart from the first active pattern in the first direction. The device also includes a field insulating film between the first active pattern and the second active pattern. An upper surface of the field insulating film is lower than or coplanar with upper surfaces of the first and second active patterns. The device further includes an element isolation structure in an isolation trench in the first active pattern and the field insulating film. An upper surface of the element isolation structure is higher than the upper surfaces of the first and second active patterns.

公开(公告)号：US12183734B2

公开(公告)日：2024-12-31

申请号：US18230052

申请日：2023-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Min Yoo ,  Ju Youn Kim ,  Hyung Joo Na ,  Bong Seok Suh ,  Joo Ho Jung ,  Eui Chul Hwang ,  Sung Moon Lee

IPC: H01L27/088 ,  H01L21/762 ,  H01L29/40 ,  H01L29/78

Abstract: A semiconductor device includes a first active pattern extending lengthwise along a first direction and a second active pattern extending lengthwise along the first direction and spaced apart from the first active pattern in the first direction. The device also includes a field insulating film between the first active pattern and the second active pattern. An upper surface of the field insulating film is lower than or coplanar with upper surfaces of the first and second active patterns. The device further includes an element isolation structure in an isolation trench in the first active pattern and the field insulating film. An upper surface of the element isolation structure is higher than the upper surfaces of the first and second active patterns.

公开(公告)号：US11538807B2

公开(公告)日：2022-12-27

申请号：US17318133

申请日：2021-05-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eui Chul Hwang ,  Ju Youn Kim ,  Hyung Joo Na ,  Bong Seok Suh ,  Sang Min Yoo ,  Joo Ho Jung ,  Sung Moon Lee

IPC: H01L27/092 ,  H01L27/02 ,  H01L29/423 ,  H01L29/08 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/306 ,  H01L21/762 ,  H01L29/66

Abstract: A semiconductor device and a method for fabricating the same, the device including an active pattern extending in a first direction on a substrate; a field insulating film surrounding a part of the active pattern; a first gate structure extending in a second direction on the active pattern and the field insulating film, a second gate structure spaced apart from the first gate structure and extending in the second direction on the active pattern and the field insulating film; and a first device isolation film between the first and second gate structure, wherein a side wall of the first gate structure facing the first device isolation film includes an inclined surface having an acute angle with respect to an upper surface of the active pattern, and a lowermost surface of the first device isolation film is lower than or substantially coplanar with an uppermost surface of the field insulating film.

公开(公告)号：US20190393220A1

公开(公告)日：2019-12-26

申请号：US16204095

申请日：2018-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung Joo Na ,  Ju Youn Kim ,  Bong Seok Suh ,  Sang Min Yoo ,  Joo Ho Jung ,  Eui Chul Hwang ,  Sung Moon Lee

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/06 ,  H01L21/8238 ,  H01L21/033

Abstract: A FINFET includes a first fin extending in a first direction on a substrate and, a second fin extending in the first direction and spaced apart from the first fin in the first direction. A third fin is provided with a long side shorter than long sides of the first fin and the second fin and is disposed between the first fin and the second fin. A first gate structure extends in a second direction different from the first direction and crosses the first fin. A device isolation layer is disposed on a lower sidewall of each of the first, second and third fins and is formed to extend in the first direction. An electrically insulating diffusion break region includes a first portion crossing between the first fin and the third fin, a second portion crossing between the second fin and the third fin, and a third portion disposed between the first portion and the second portion on the third fin. The diffusion break region extends in the second direction on the device isolation layer. A level of a lower surface of the third portion is higher than a level of a lower end of each of the first portion and the second portion and is lower than a level of an upper surface of the first gate structure.