MEMORY DEVICE AND OPERATING METHOD THEREOF
    1.
    发明公开

    公开(公告)号:US20240242743A1

    公开(公告)日:2024-07-18

    申请号:US18368907

    申请日:2023-09-15

    CPC classification number: G11C7/04 G11C7/08 G11C7/1063 G11C7/14

    Abstract: A memory device includes a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a voltage generator configured to output a first voltage that varies according to temperature of the memory device, a second voltage that is constant regardless of the temperature, and a first reference voltage applied to at least one line among the plurality of word lines and the plurality of bit lines, and a temperature compensation circuit configured to generate a compensation offset voltage based on the first voltage and the second voltage, and output a second reference voltage based on the first reference voltage and the compensation offset voltage.

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