公开(公告)号：US20220216296A1

公开(公告)日：2022-07-07

申请号：US17376458

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gabjin NAM ,  Youngbin LEE ,  Cheoljin CHO ,  Jaehyoung CHOI

IPC: H01L49/02 ,  H01L27/11507

Abstract: Provided is a method of fabricating a capacitor. The method of fabricating a capacitor may include forming a first electrode, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, and applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation.

公开(公告)号：US20230282389A1

公开(公告)日：2023-09-07

申请号：US17897519

申请日：2022-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjun LEE ,  Gabjin NAM ,  Eunha LEE ,  Hyangsook LEE ,  Bongjin KUH ,  Junghwa KIM

IPC: H01B3/12 ,  H01B3/10 ,  H01L29/51 ,  H01L29/49 ,  H01L49/02

CPC classification number: H01B3/12 ,  H01B3/10 ,  H01L29/516 ,  H01L29/517 ,  H01L29/4908 ,  H01L28/40 ,  H01L29/785

Abstract: A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).