公开(公告)号：US11322530B2

公开(公告)日：2022-05-03

申请号：US16415064

申请日：2019-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang Zhang

IPC: H01L27/146 ,  H01L27/148 ,  H01L27/142

Abstract: Provided is an image sensor including a semiconductor substrate having a first surface and a second surface opposite each other, an organic photoelectric conversion device on the first surface of the semiconductor substrate, a through electrode structure connected to the organic photoelectric conversion device, and a pixel separation structure extending from the first surface toward the second surface of the semiconductor substrate. The semiconductor substrate may include a photoelectric conversion region in the semiconductor substrate. The pixel separation structure may surround the photoelectric conversion region when viewed in plan. The pixel separation structure may include a separation conductive pattern and a first sidewall dielectric pattern. The first sidewall dielectric pattern may continuously extend from between the separation conductive pattern and the semiconductor substrate to between the semiconductor substrate and a sidewall of the through electrode structure. A portion of the pixel separation structure penetrated by the through electrode structure.

公开(公告)号：US11233087B2

公开(公告)日：2022-01-25

申请号：US16787408

申请日：2020-02-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H04N5/335 ,  H01L27/148 ,  G02B5/20 ,  H01L25/16

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US10692936B2

公开(公告)日：2020-06-23

申请号：US16110521

申请日：2018-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang Zhang

IPC: H01L27/30 ,  H01L51/44 ,  H01L27/28

Abstract: An image sensor includes a substrate which includes a first surface and a light-incident second surface facing the first surface, a first semiconductor photoelectric conversion element inside the substrate, an organic photoelectric conversion element on the second surface of the substrate, a first floating diffusion region on the first surface of the substrate, a first transfer transistor having a first end connected to the first semiconductor photoelectric conversion element and a second end connected to the first floating diffusion region, and a second transfer transistor having a first end connected to the organic photoelectric conversion element and a second end connected to the first floating diffusion region. The first semiconductor photoelectric conversion element, the first floating diffusion region, and the first transfer transistor and the second transfer transistor may be in a first pixel region of the substrate.

公开(公告)号：US20190319038A1

公开(公告)日：2019-10-17

申请号：US16201337

申请日：2018-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang Zhang

IPC: H01L27/11575 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11548 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11573 ,  H01L23/535

Abstract: A semiconductor device includes a peripheral circuit region on a first substrate, and including at least one circuit device, a memory cell region on a second substrate, on the first substrate, and including memory cells, and a through wiring region including a conductive region that passes through the memory cells and is on the second substrate, and a through contact plug that passes through the conductive region and the second substrate and is configured to electrically connect the memory cell region to the at least one circuit device.

公开(公告)号：US20190051599A1

公开(公告)日：2019-02-14

申请号：US15902806

申请日：2018-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang Zhang ,  Kwang Soo Kim ,  Won Bong Jung

IPC: H01L23/522 ,  H01L21/768 ,  H01L27/11524 ,  H01L27/11536 ,  H01L27/11556 ,  H01L23/532

Abstract: A semiconductor device comprises a peripheral circuit region provided on a first substrate and including circuit devices and a contact plug extending on the first substrate in a vertical direction; a memory cell region provided on a second substrate disposed above the first substrate and including memory cells; and a through insulating region penetrating through the second substrate on the contact plug and covering an upper surface of the contact plug.

公开(公告)号：US11508775B2

公开(公告)日：2022-11-22

申请号：US17398493

申请日：2021-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang Zhang ,  Shi Li Quan ,  Hyung-yong Kim ,  Seug-gab Park ,  In-gyu Baek ,  Kyung-rae Byun ,  Jin-yong Choi

IPC: H01L27/146 ,  H04N5/335

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

公开(公告)号：US10586824B2

公开(公告)日：2020-03-10

申请号：US16003339

申请日：2018-06-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H01L27/148 ,  H04N5/335 ,  H01L25/16 ,  G02B5/20

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US11843020B2

公开(公告)日：2023-12-12

申请号：US17577615

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  JungHun Kim ,  Sang-Su Park ,  Beomsuk Lee ,  Gang Zhang ,  Jaesung Hur

IPC: H01L27/146 ,  H01L27/148 ,  G02B5/20 ,  H01L25/16 ,  H04N25/00

CPC classification number: H01L27/14647 ,  G02B5/20 ,  H01L25/167 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14621 ,  H01L27/14638 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14689 ,  H01L27/14812 ,  H04N25/00 ,  H01L27/14612

Abstract: Disclosed is an image sensor including a substrate having a first surface and a second surface opposite to each other, a first photoelectric conversion region and a second photoelectric conversion region in the substrate, a through electrode between the first and second photoelectric conversion regions, an insulation structure on the second surface of the substrate, a first color filter and a second color filter respectively provided on the first and second photoelectric conversion regions, and a photoelectric conversion layer on the insulation structure and electrically connected to the through electrode. The through electrode include a first end adjacent to the first surface and a second end adjacent to the second surface. The first end has a non-planar shape.

公开(公告)号：US11183527B2

公开(公告)日：2021-11-23

申请号：US16410386

申请日：2019-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang Zhang ,  Shi Li Quan ,  Hyung-yong Kim ,  Seug-gab Park ,  In-gyu Baek ,  Kyung-rae Byun ,  Jin-yong Choi

IPC: H01L27/146 ,  H04N5/335

Abstract: The inventive concepts provide a three-dimensional (3D) image sensor, based on structured light (SL), having a structure in which difficulty in a manufacturing process of a wiring layer is decreased and/or an area of a bottom pad of a capacitor is increased. The 3D image sensor includes: a pixel area including a photodiode in a semiconductor substrate and a gate group including a plurality of gates; a multiple wiring layer on an upper portion of the pixel area, the multiple wiring layer including at least two wiring layers; and a capacitor structure between a first wiring layer on a lowermost wiring layer of the multiple wiring layer and a second wiring layer on the first wiring layer, the capacitor structure including a bottom pad, a top pad, and a plurality of capacitors, wherein the bottom pad is connected to the first wiring layer.

公开(公告)号：US10804194B2

公开(公告)日：2020-10-13

申请号：US15902806

申请日：2018-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gang Zhang ,  Kwang Soo Kim ,  Won Bong Jung

IPC: H01L23/522 ,  H01L21/68 ,  H01L27/11524 ,  H01L27/11536 ,  H01L27/11556 ,  H01L23/532 ,  H01L21/768 ,  H01L27/11573 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11575

Abstract: A semiconductor device comprises a peripheral circuit region provided on a first substrate and including circuit devices and a contact plug extending on the first substrate in a vertical direction; a memory cell region provided on a second substrate disposed above the first substrate and including memory cells; and a through insulating region penetrating through the second substrate on the contact plug and covering an upper surface of the contact plug.