公开(公告)号：US12112783B2

公开(公告)日：2024-10-08

申请号：US17537937

申请日：2021-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Pil Ko ,  Yongjae Kim ,  Geonhee Bae ,  Gawon Lee ,  Kilho Lee

IPC: G11C11/16 ,  H01L23/528 ,  H10B61/00 ,  H10N50/10 ,  H10N50/20 ,  H10N50/80 ,  H10N50/85

CPC classification number: G11C11/161 ,  H01L23/528 ,  H10B61/00 ,  H10N50/10 ,  H10N50/20 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetic memory device may include a substrate including a first region and a second region, a first interlayer insulating layer on the substrate, a first capping layer on the first interlayer insulating layer, the first capping layer covering the first and second regions of the substrate, a second interlayer insulating layer on a portion of the first capping layer covering the first region of the substrate, a bottom electrode contact included in the second interlayer insulating layer, a magnetic tunnel junction pattern on the bottom electrode contact, and a second capping layer on the second interlayer insulating layer, the second capping layer being in contact with the first capping layer on the second region of the substrate.