公开(公告)号：US20210273041A1

公开(公告)日：2021-09-02

申请号：US17323433

申请日：2021-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo KANG ,  Hyun-suk LEE ,  Gi-hee CHO

IPC: H01L49/02 ,  H01L27/108

Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.

公开(公告)号：US20240234485A1

公开(公告)日：2024-07-11

申请号：US18614935

申请日：2024-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-goo KANG ,  Hyun-suk LEE ,  Gi-hee CHO

IPC: H01G4/30 ,  H10B12/00

CPC classification number: H01L28/75 ,  H01L28/60 ,  H01L28/87 ,  H01L28/88 ,  H01L28/90 ,  H10B12/0335 ,  H10B12/31

Abstract: An integrated circuit device includes a conductive region on a substrate and a lower electrode structure including a main electrode part spaced apart from the conductive region and a bridge electrode part between the main electrode part and the conductive region. A dielectric layer contacts an outer sidewall of the main electrode part. To manufacture the integrated circuit device, a preliminary bridge electrode layer is formed in a hole of a mold pattern on the substrate, and the main electrode part is formed on the preliminary bridge electrode layer in the hole. The mold pattern is removed to expose a sidewall of the preliminary bridge electrode layer, and a portion of the preliminary electrode part is removed to form the bridge electrode part. The dielectric layer is formed to contact the outer sidewall of the main electrode part.

公开(公告)号：US20180019125A1

公开(公告)日：2018-01-18

申请号：US15651068

申请日：2017-07-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-won YU ,  Hyun-suk LEE ,  Ji-woon PARK ,  Gi-hee CHO ,  Hee-sook PARK ,  Woong-hee SOHN

IPC: H01L21/205 ,  H01L21/54 ,  H01L21/67 ,  H01L21/677

CPC classification number: H01L21/205 ,  C23C16/045 ,  C23C16/4408 ,  C23C16/45527 ,  H01L21/54 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67739 ,  H01L21/67769

Abstract: A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.