公开(公告)号：US20250046619A1

公开(公告)日：2025-02-06

申请号：US18791926

申请日：2024-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guifu Yang ,  Sunghwan Jang ,  Sanghyeon Kim ,  Jinbum Kim ,  Hanhum Park ,  Sunguk Jang

IPC: H01L21/3115 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: A method of manufacturing a semiconductor apparatus includes forming a target layer, a bottom mask layer including a first mask, and a photoresist pattern, on a substrate; contracting the photoresist pattern; forming a mandrill bar on the first mask layer using the photoresist pattern that had been contracted; forming a conformal spacer layer on the first mask and the mandrill bar; etching the spacer layer such that at least a portion of the first mask is free of the spacer layer; forming a sacrificial layer on the at least the portion of the first mask; forming a hard-mask bar by etching the spacer layer and the first mask; and patterning the target layer using the hard-mask bar.