公开(公告)号：US10910419B2

公开(公告)日：2021-02-02

申请号：US16418557

申请日：2019-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwideok Ryan Lee ,  Taeyon Lee ,  Sangchun Park

IPC: H01L27/146 ,  H01L31/032 ,  H04N5/374 ,  H01L29/786 ,  H01L29/417

Abstract: An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.

公开(公告)号：US20240038792A1

公开(公告)日：2024-02-01

申请号：US18482923

申请日：2023-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongseok Cho ,  Jongeun Park ,  Jeongsoon Kang ,  Gyunha Park ,  Gwideok Ryan Lee

IPC: H01L27/146 ,  H04N25/79 ,  H04N25/77 ,  H04N25/78

CPC classification number: H01L27/1461 ,  H04N25/79 ,  H04N25/77 ,  H04N25/78 ,  H01L27/14645

Abstract: The stacked image sensor includes a first semiconductor substrate and including a photoelectric conversion region and a floating diffusion area, a first insulating layer under the first semiconductor substrate and including a gate of a transfer transistor, a second semiconductor substrate under the first insulating layer and including first impurities of a first conductivity type, and a second insulating layer under the second semiconductor substrate and including a metal pad of a floating diffusion node and a gate of a source follower transistor, wherein the floating diffusion area and the metal pad of the floating diffusion node are electrically connected through a deep contact that is in the first insulating layer and the second semiconductor substrate. The second semiconductor substrate further includes a well region. At least a portion of deep contact may be in the well region. The well region may surround the deep contact.

公开(公告)号：US20250142233A1

公开(公告)日：2025-05-01

申请号：US18885926

申请日：2024-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changhwa Kim ,  Gwideok Ryan Lee ,  Doowon Kwon ,  Daehoon Kim ,  Changyong Um

IPC: H04N25/79 ,  H01L27/146

Abstract: A stacked image sensor includes a first semiconductor chip, wherein the first semiconductor chip includes a first contact electrically connected to the first transfer transistor and disposed to extend in a Z-axis direction, a second contact electrically connected to the second transfer transistor and disposed to extend in the Z-axis direction, a plurality of third contacts electrically connected with each of the first floating diffusion region and the second floating diffusion region and disposed to extend in the Z-axis direction, and a first metal region configured to electrically connect the plurality of third contacts to one another and disposed to extend in the Z-axis direction, and the first contact, the second contact, and the first metal region contact a first surface of a first interlayer insulation layer where the first contact, the second contact, and the first metal region are formed.

公开(公告)号：US11569298B2

公开(公告)日：2023-01-31

申请号：US17034316

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangchun Park ,  Kwansik Kim ,  Hongki Kim ,  Sangsu Park ,  Beomsuk Lee ,  Taeyon Lee ,  Gwideok Ryan Lee

IPC: H01L27/30 ,  H01L27/146 ,  H01L51/44

Abstract: An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.

公开(公告)号：US20240387568A1

公开(公告)日：2024-11-21

申请号：US18502903

申请日：2023-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwideok Ryan Lee ,  Gyunha Park ,  Jongeun Park

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a plurality of photodiodes therein, a plurality of transmission transistors having respective current carrying terminals electrically coupled to corresponding ones of the plurality of photodiodes, and a plurality of floating diffusion regions electrically coupled to current carrying terminals of corresponding ones of the plurality of transmission transistors. A connection wire is also provided, which is configured to electrically interconnect at least four of the plurality of floating diffusion regions together. The connection wire includes: (i) a central connection segment having first and second ends, (ii) a first connection segment having a first end electrically connected to the first end of the central connection segment and a second end electrically connected to a first of the plurality of floating diffusion regions, and (iii) a second connection segment having a first end electrically connected to the second end of the central connection segment and a second end electrically connected to a second of the plurality of floating diffusion regions. The first and central connection segments may be linear segments, and the first end of the first connection segment may intersect with the first end of the central connection segment at an obtuse angle when viewed from a plan layout perspective.

公开(公告)号：US11545526B2

公开(公告)日：2023-01-03

申请号：US17386821

申请日：2021-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gwideok Ryan Lee ,  Jaekyu Lee

IPC: H01L27/30

Abstract: An image sensor includes a substrate including a first surface and a second surface, a first transmission gate electrode on the first surface of the substrate, a storage node on the first surface of the substrate and including a first storage gate electrode isolated from direct contact with the first transmission gate electrode, a dielectric layer on the first storage gate electrode, and a semiconductor layer on the dielectric layer. The image sensor may include a first cover insulating layer on the semiconductor layer and vertically overlapping the first transmission gate electrode, and an organic photoelectric conversion layer on an upper surface of the semiconductor layer and an upper surface of the first cover insulating layer.

公开(公告)号：US11457165B2

公开(公告)日：2022-09-27

申请号：US17237843

申请日：2021-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myunglae Chu ,  Gwideok Ryan Lee ,  Taeyon Lee ,  Jaehoon Jeon

IPC: H04N5/225 ,  H04N5/232 ,  H04N5/369 ,  H04N5/335 ,  H04N5/374 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/378

Abstract: A pixel array and an image sensor are provided. The image sensor includes a substrate, a pixel array of pixels, each pixel including a pixel circuit and a pixel conversion device. The pixel circuit is formed in a pixel area corresponding to the pixel in the substrate. The pixel conversion device is arranged on the substrate to vertically overlap the pixel circuit. The pixel circuit includes a floating diffusion node, a reset switching device, and an amplifier including a load device and a plurality of switching devices, the load device being arranged in the pixel area.