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公开(公告)号:US20240321726A1
公开(公告)日:2024-09-26
申请号:US18419715
申请日:2024-01-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinwoo LEE , Yubo QIAN , Hyunjae KANG , Gyeongseop KIM , Sutae KIM , Jaeyoung PARK , Jeonwon JEONG
IPC: H01L23/522 , H01L23/528 , H01L27/088
CPC classification number: H01L23/5226 , H01L23/528 , H01L27/088 , H01L27/0886
Abstract: An integrated circuit device includes a first conductive pattern disposed on a substrate, a second conductive pattern surrounding a portion of the first conductive pattern and covering a lower portion of a sidewall of the first conductive pattern, an upper insulation structure on the first conductive pattern and the second conductive pattern, and an upper conductive pattern penetrating through the upper insulation structure and extending in a vertical direction, wherein the upper conductive pattern includes a main plug portion overlapping the first conductive pattern and the second conductive pattern in the vertical direction, and a vertical extension extending from a portion of the main plug portion toward the substrate, covering an upper of the upper sidewall of the first conductive pattern, and overlapping the second conductive pattern in the vertical direction, and a dummy contact is formed on a single diffusion break region on the substrate.
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2.
公开(公告)号:US20190198340A1
公开(公告)日:2019-06-27
申请号:US16135669
申请日:2018-09-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gyeongseop KIM , Kyung Yub JEON , Seul Gi HAN
IPC: H01L21/308 , H01L21/033 , H01L21/311
Abstract: A method for defining a length of a fin including forming a plurality of first slice walls on a mask material layer, which is provided over the fin, using a plurality of hard mask patterns, providing a plurality of fill mask patterns self-aligned with respect to the plurality of first slice walls to expose one or more select areas between one or more pairs of adjacent ones of the plurality of first slice walls, and providing a trim mask pattern including one or more openings and self-aligned with respect to the plurality of second slice walls to expose one or more of the plurality of first slice walls may be provided.
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