INTEGRATED CIRCUIT DEVICE
    1.
    发明公开

    公开(公告)号:US20240321726A1

    公开(公告)日:2024-09-26

    申请号:US18419715

    申请日:2024-01-23

    CPC classification number: H01L23/5226 H01L23/528 H01L27/088 H01L27/0886

    Abstract: An integrated circuit device includes a first conductive pattern disposed on a substrate, a second conductive pattern surrounding a portion of the first conductive pattern and covering a lower portion of a sidewall of the first conductive pattern, an upper insulation structure on the first conductive pattern and the second conductive pattern, and an upper conductive pattern penetrating through the upper insulation structure and extending in a vertical direction, wherein the upper conductive pattern includes a main plug portion overlapping the first conductive pattern and the second conductive pattern in the vertical direction, and a vertical extension extending from a portion of the main plug portion toward the substrate, covering an upper of the upper sidewall of the first conductive pattern, and overlapping the second conductive pattern in the vertical direction, and a dummy contact is formed on a single diffusion break region on the substrate.

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