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    SEMICONDUCTOR MEMORY DEVICE
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20250107066A1

    公开(公告)日：2025-03-27

    申请号：US18643311

    申请日：2024-04-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bo Won Yoo ,  Jin Woo Han ,  Seok Han Park ,  Sung-Min Park ,  Gyu Hwan Oh

    IPC: H10B12/00 ,  G11C5/06

    Abstract: A semiconductor memory device includes a cell region element separation film that is on a substrate and includes first and second cell region side walls; an active pattern that is on the substrate; a word line that is on the first side wall of the active pattern; a back gate electrode that is on the second side wall of the active pattern; a bit line that is electrically connected to the first side of the active pattern; and a data storage pattern that is electrically connected to the second side of the active pattern, where the word line includes an electrode part and a plug connecting part, and where the plug connecting part of the word line includes a first connecting extending part and a second connecting extending part.

    Semiconductor devices including data storage patterns
    3.
    发明授权
    Semiconductor devices including data storage patterns 有权

    公开(公告)号：US10833124B2

    公开(公告)日：2020-11-10

    申请号：US15953573

    申请日：2018-04-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyo Seop Kim ,  Chang Woo Sun ,  Gyu Hwan Oh ,  Joon Kim ,  Joon Youn Hwang

    IPC: H01L23/525 ,  H01L27/24 ,  H01L45/00

    Abstract: A semiconductor device is provided including a base insulating layer on a substrate; a first conductive line that extends in a first direction on the base insulating layer; data storage structures on the first conductive line; selector structures on the data storage structures, each of the selector structures including a lower selector electrode, a selector, and an upper selector electrode; an insulating layer in a space between the selector structures; and a second conductive line disposed on the selector structures and the insulating layer and extended in a second direction intersecting the first direction. An upper surface of the insulating layer is higher than an upper surface of the upper selector electrode.

    SEMICONDUCTOR MEMORY DEVICE
    4.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20250081445A1

    公开(公告)日：2025-03-06

    申请号：US18660803

    申请日：2024-05-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Bo Won Yoo ,  Seok Han Park ,  Keun Ui Kim ,  Yu Jin Kim ,  Joong Chan Shin ,  Gyu Hwan Oh ,  Eun Suk Jang ,  Jin Woo Han

    IPC: H10B12/00

    Abstract: A semiconductor memory device includes a bit line extending in a first direction on a substrate, an active pattern on the bit line, a word line on a first sidewall of the active pattern and extending in a second direction, a back gate electrode on a second sidewall of the active pattern and extending in the second direction, a gate isolation pattern on the first sidewall of the active pattern and including a low-k pattern extending in the second direction, and a data storage pattern connected to the second surface of the active pattern. The word line is between the active pattern and the gate isolation pattern, and a vertical distance between the bit line and the word line is greater than a vertical distance between the bit line and the low-k pattern.

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