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公开(公告)号：US20240357796A1
公开(公告)日：2024-10-24
申请号：US18543261
申请日：2023-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Han Jin Lim , Jin Woo Han , Ki Seok Lee
CPC classification number: H10B12/377 , H01L28/55 , H10B12/36 , H10B12/50 , H10B53/30
Abstract: Provided is a semiconductor memory device. The semiconductor memory device includes a substrate, a channel region on the substrate, first and second source/drain regions electrically connected to the channel region, a gate electrode that extends in a first direction and is on the channel region, a conductive line that extends in a second direction intersecting the first direction and is electrically connected to the second source/drain region, and a capacitor structure electrically connected to the first source/drain region on the substrate. The capacitor structure may include a plurality of first electrodes stacked and spaced apart from each other in a third direction perpendicular to an upper surface of the substrate, a plurality of trenches extending into the plurality of first electrodes, a capacitor dielectric film that extends along side walls of each of the plurality of trenches, and a plurality of second electrodes in the plurality of trenches, respectively.
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公开(公告)号：US20250081445A1
公开(公告)日：2025-03-06
申请号：US18660803
申请日：2024-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bo Won Yoo , Seok Han Park , Keun Ui Kim , Yu Jin Kim , Joong Chan Shin , Gyu Hwan Oh , Eun Suk Jang , Jin Woo Han
IPC: H10B12/00
Abstract: A semiconductor memory device includes a bit line extending in a first direction on a substrate, an active pattern on the bit line, a word line on a first sidewall of the active pattern and extending in a second direction, a back gate electrode on a second sidewall of the active pattern and extending in the second direction, a gate isolation pattern on the first sidewall of the active pattern and including a low-k pattern extending in the second direction, and a data storage pattern connected to the second surface of the active pattern. The word line is between the active pattern and the gate isolation pattern, and a vertical distance between the bit line and the word line is greater than a vertical distance between the bit line and the low-k pattern.
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Patent Agency Ranking
公开(公告)号：US20250107066A1
公开(公告)日：2025-03-27
申请号：US18643311
申请日：2024-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Bo Won Yoo , Jin Woo Han , Seok Han Park , Sung-Min Park , Gyu Hwan Oh
Abstract: A semiconductor memory device includes a cell region element separation film that is on a substrate and includes first and second cell region side walls; an active pattern that is on the substrate; a word line that is on the first side wall of the active pattern; a back gate electrode that is on the second side wall of the active pattern; a bit line that is electrically connected to the first side of the active pattern; and a data storage pattern that is electrically connected to the second side of the active pattern, where the word line includes an electrode part and a plug connecting part, and where the plug connecting part of the word line includes a first connecting extending part and a second connecting extending part.
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公开(公告)号：US11717126B2
公开(公告)日：2023-08-08
申请号：US17052514
申请日：2019-05-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woong Hwang , Ji Min Kim , Tae Sang Park , Kee Yeon Cho , Jin Woo Han
Abstract: A motor assembly comprises a stator, a rotor configured to be rotated about a shaft by electromagnetically interacting with the stator, an impeller configured to be rotated with the rotor about the shaft by being coupled to the rotor and configured to suction air in response to a rotation, a housing configured to cover between the impeller and the stator by being coupled to the stator, a cover comprising an inlet through which air sucked by the impeller is introduced, and configured to cover the impeller, a guide member configured to guide the air discharged from the impeller and configured to be coupled to the housing, and a plurality of first vanes protruding from one of the cover and the guide member to an axial direction and coupled to the other of the cover and the guide member. The cover and the guide member are configured to be movable in the axial direction in response to not being coupled to the housing, and the cover comprises a contact portion in contact with the impeller according to a position of the cover. The contact portion is spaced apart from the impeller in response to coupling between the guide member and the housing.
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公开(公告)号：US09048712B2
公开(公告)日：2015-06-02
申请号：US13742583
申请日：2013-01-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Young Lee , Deok Jin Kim , Young Kwan Kim , Young Gyu An , Byung Ryel In , Jin Woo Han
CPC classification number: H02K1/28 , H02K1/2773 , H02K1/278 , H02K1/30 , H02K5/02 , H02K2213/03
Abstract: A rotor having an improved structure capable of achieving an enhancement in durability and a motor having the rotor are disclosed. The rotor is configured to co-operate with a stator in an electromagnetic manner such that the rotor rotates. The rotor includes a sleeve having a shaft hole, through which the motor shaft extends, rotor cores spaced apart from one another in a circumferential direction of the rotor, and at least one of permanent magnets disposed between adjacent ones of the rotor cores such that the permanent magnets are arranged in a radial manner about the sleeve. First and second cover plates are disposed at opposite sides of the permanent magnets in an axial direction. The first and second cover plates have plate holes respectively corresponding to the through holes of the rotor cores. The rotor cores and the first and second cover plates are coupled by fastening members.
Abstract translation: 公开了具有能够实现耐久性提高的结构的转子和具有转子的电动机。 转子被配置为以电磁方式与定子协作，使得转子旋转。 转子包括具有轴孔的套筒，电机轴延伸穿过该轴孔，在转子的圆周方向上彼此间隔开的转子铁心以及设置在相邻转子芯之间的永磁体中的至少一个， 永磁体围绕套筒以径向方式布置。 第一和第二盖板沿轴向设置在永磁体的相对侧。 第一和第二盖板具有分别对应于转子芯的通孔的板孔。 转子芯和第一和第二盖板通过紧固件联接。
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公开(公告)号：US20240119978A1
公开(公告)日：2024-04-11
申请号：US18329067
申请日：2023-06-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin Woo Han , Hyun Geun Choi , Ki Seok Lee , Seok Han Park
Abstract: Provided a semiconductor memory device. The semiconductor memory device includes a substrate, a gate electrode on the substrate, a bit line on the substrate, a cell semiconductor pattern on a side of the gate electrode and electrically connected to the bit line, a capacitor structure including a first electrode electrically connected to the cell semiconductor pattern, a second electrode on the first electrode, and a capacitor dielectric film between the first electrode and the second electrode, a bit line strapping line spaced apart from the bit line in the second direction, and electrically connected to the bit line, a bit line selection line between the bit line and the bit line strapping line, and a selection semiconductor pattern between the bit line and the bit line strapping line and electrically connected to all of the bit line, the bit line strapping line, and the bit line selection line.
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公开(公告)号：US09419482B2
公开(公告)日：2016-08-16
申请号：US13741508
申请日：2013-01-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Young Lee , Young Gyu An , Deok Jin Kim , Young Kwan Kim , Byung Ryel In , Jin Woo Han
CPC classification number: H02K1/28 , H02K1/2773 , H02K1/278
Abstract: A rotor having an improved structure capable of achieving enhanced durability is disposed in a motor, the rotor including a sleeve having a shaft hole, through which a motor shaft extends, rotor cores spaced apart from one another in a circumferential direction of the rotor, and permanent magnets each disposed between adjacent ones of the rotor cores such that the permanent magnets are arranged in a radial manner about the sleeve. First and second cover plates may be disposed at opposite sides of the permanent magnets in an axial direction. Each of the first and second cover plates may include a shaft receiving hole to receive the motor shaft. The rotor may include a plurality of support members each having a magnet support portion arranged to support an outer end of a corresponding one of the permanent magnets in a radial direction of the rotor.
Abstract translation: 具有能够实现增强的耐久性的改进结构的转子设置在电动机中，转子包括具有轴孔的套筒，电动机轴沿着轴孔延伸，转子芯在转子的圆周方向上彼此间隔开，以及 永久磁铁各自设置在相邻的转子芯之间，使得永磁体以径向方式围绕套筒布置。 第一和第二盖板可以在轴向方向上设置在永磁体的相对侧。 第一和第二盖板中的每一个可以包括用于容纳马达轴的轴接收孔。 转子可以包括多个支撑构件，每个支撑构件具有设置成在转子的径向方向上支撑相应的一个永磁体的外端的磁体支撑部分。
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