公开(公告)号：US20230121884A1

公开(公告)日：2023-04-20

申请号：US17940635

申请日：2022-09-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAESUNG HUR ,  KIJOONG YOON ,  HAJIN LIM ,  JONGMIN JEON ,  TAEKSOO JEON ,  IN SUNG JOE

IPC: H01L27/146

Abstract: An image sensor includes a substrate, a plurality of unit pixels provided on a pixel area of the substrate, a plurality of device isolation patterns defining the plurality of unit pixels on the pixel area, a light-shield layer provided on a top surface of the substrate and comprising a grid structure defining a plurality of optical transmission regions, a plurality of color filters provided on the plurality of optical transmission regions of the light-shield layer, and a plurality of micro-lenses provided on the plurality color filters. The light-shield layer includes a light-shield pattern, a low-refractive pattern provided on the light-shield pattern, and a protection layer configured to cover the light-shield pattern and the low-refractive pattern on the substrate. The low-refractive pattern includes a porous silicon compound. Pores in the low-refractive pattern have a diameter of about 0.2 nm to about 1 nm.

公开(公告)号：US20200381473A1

公开(公告)日：2020-12-03

申请号：US16711301

申请日：2019-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHANGHWA KIM ,  KWANSIK KIM ,  DONGCHAN KIM ,  SANG-SU PARK ,  BEOMSUK LEE ,  TAEYON LEE ,  HAJIN LIM

IPC: H01L27/146 ,  H01L51/44

Abstract: An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.

公开(公告)号：US20230170376A1

公开(公告)日：2023-06-01

申请号：US18046491

申请日：2022-10-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KIJOONG YOON ,  KEEWON KIM ,  MINKWAN KIM ,  SANGHOON AHN ,  HAJIN LIM ,  JONGMIN JEON ,  TAEKSOO JEON ,  JAESUNG HUR

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14645 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463

Abstract: A method of fabricating an image sensor includes providing a substrate that includes a plurality of pixel regions, forming an anti-reflection layer on the substrate, forming color filters on the anti-reflection layer, where the color filters are spaced apart from each other by openings, forming pyrolytic polymer patterns between the color filters that fill the openings, forming a capping layer on the color filters and the pyrolytic polymer patterns, and performing a thermal treatment process that removes the pyrolytic polymer patterns and forms air gap regions between the color filters.

公开(公告)号：US20240145514A1

公开(公告)日：2024-05-02

申请号：US18237278

申请日：2023-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAESUNG HUR ,  HAJIN LIM ,  TAEKSOO JEON ,  KI JOONG YOON ,  JONGMIN JEON

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14636 ,  H01L27/1469

Abstract: An image sensor includes a first chip and a second chip. The first chip includes a first substrate including photoelectric conversion parts and a back-side insulating layer covering a first surface of the first substrate. The second chip, which is disposed adjacent the first chip, includes circuits configured to drive the first chip. The back-side insulating layer may include a fixed-charge layer, a refractive index adjusting layer, and a capping layer, which are sequentially disposed on the first surface of the first substrate. The refractive index adjusting layer may include a first element, a second element, and oxygen. A conduction band minimum of an oxide of the second element may be higher than a conduction band minimum of an oxide of the first element.