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公开(公告)号:US20230121884A1
公开(公告)日:2023-04-20
申请号:US17940635
申请日:2022-09-08
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JAESUNG HUR , KIJOONG YOON , HAJIN LIM , JONGMIN JEON , TAEKSOO JEON , IN SUNG JOE
IPC: H01L27/146
Abstract: An image sensor includes a substrate, a plurality of unit pixels provided on a pixel area of the substrate, a plurality of device isolation patterns defining the plurality of unit pixels on the pixel area, a light-shield layer provided on a top surface of the substrate and comprising a grid structure defining a plurality of optical transmission regions, a plurality of color filters provided on the plurality of optical transmission regions of the light-shield layer, and a plurality of micro-lenses provided on the plurality color filters. The light-shield layer includes a light-shield pattern, a low-refractive pattern provided on the light-shield pattern, and a protection layer configured to cover the light-shield pattern and the low-refractive pattern on the substrate. The low-refractive pattern includes a porous silicon compound. Pores in the low-refractive pattern have a diameter of about 0.2 nm to about 1 nm.
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公开(公告)号:US20220384502A1
公开(公告)日:2022-12-01
申请号:US17575874
申请日:2022-01-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JIN-SEONG PARK , SANGHOON UHM , TAEKSOO JEON , DONG-GYU KIM , YOON-SEO KIM , HYUN-JUN JEONG
IPC: H01L27/146
Abstract: An image sensor includes a substrate including a plurality of pixels and having a first surface and a second surface opposite to the first surface, a photoelectric conversion portion disposed in the substrate in each of the pixels, a transfer gate disposed on the first surface of the substrate in each of the pixels, a first interlayer insulating layer covering the substrate and the transfer gate, a first hydrogen blocking layer disposed on the first interlayer insulating layer, a first active pattern disposed on the first hydrogen blocking layer and including a metal oxide doped with nitrogen, a first gate disposed on the first active pattern, a second interlayer insulating layer covering the first gate and the first active pattern, and upper source/drain contacts penetrating the second interlayer insulating layer and contacting the first active pattern at two sides of the first gate.
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公开(公告)号:US20230170376A1
公开(公告)日:2023-06-01
申请号:US18046491
申请日:2022-10-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: KIJOONG YOON , KEEWON KIM , MINKWAN KIM , SANGHOON AHN , HAJIN LIM , JONGMIN JEON , TAEKSOO JEON , JAESUNG HUR
IPC: H01L27/146
CPC classification number: H01L27/14685 , H01L27/14645 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463
Abstract: A method of fabricating an image sensor includes providing a substrate that includes a plurality of pixel regions, forming an anti-reflection layer on the substrate, forming color filters on the anti-reflection layer, where the color filters are spaced apart from each other by openings, forming pyrolytic polymer patterns between the color filters that fill the openings, forming a capping layer on the color filters and the pyrolytic polymer patterns, and performing a thermal treatment process that removes the pyrolytic polymer patterns and forms air gap regions between the color filters.
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公开(公告)号:US20240145514A1
公开(公告)日:2024-05-02
申请号:US18237278
申请日:2023-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: JAESUNG HUR , HAJIN LIM , TAEKSOO JEON , KI JOONG YOON , JONGMIN JEON
IPC: H01L27/146
CPC classification number: H01L27/14634 , H01L27/14636 , H01L27/1469
Abstract: An image sensor includes a first chip and a second chip. The first chip includes a first substrate including photoelectric conversion parts and a back-side insulating layer covering a first surface of the first substrate. The second chip, which is disposed adjacent the first chip, includes circuits configured to drive the first chip. The back-side insulating layer may include a fixed-charge layer, a refractive index adjusting layer, and a capping layer, which are sequentially disposed on the first surface of the first substrate. The refractive index adjusting layer may include a first element, a second element, and oxygen. A conduction band minimum of an oxide of the second element may be higher than a conduction band minimum of an oxide of the first element.
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