IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230121884A1

    公开(公告)日:2023-04-20

    申请号:US17940635

    申请日:2022-09-08

    Abstract: An image sensor includes a substrate, a plurality of unit pixels provided on a pixel area of the substrate, a plurality of device isolation patterns defining the plurality of unit pixels on the pixel area, a light-shield layer provided on a top surface of the substrate and comprising a grid structure defining a plurality of optical transmission regions, a plurality of color filters provided on the plurality of optical transmission regions of the light-shield layer, and a plurality of micro-lenses provided on the plurality color filters. The light-shield layer includes a light-shield pattern, a low-refractive pattern provided on the light-shield pattern, and a protection layer configured to cover the light-shield pattern and the low-refractive pattern on the substrate. The low-refractive pattern includes a porous silicon compound. Pores in the low-refractive pattern have a diameter of about 0.2 nm to about 1 nm.

    IMAGE SENSOR AND SEMICONDUCTOR DEVICE HAVING A METAL OXIDE SEMICONDUCTOR LAYER DOPED WITH NITROGEN, AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220384502A1

    公开(公告)日:2022-12-01

    申请号:US17575874

    申请日:2022-01-14

    Abstract: An image sensor includes a substrate including a plurality of pixels and having a first surface and a second surface opposite to the first surface, a photoelectric conversion portion disposed in the substrate in each of the pixels, a transfer gate disposed on the first surface of the substrate in each of the pixels, a first interlayer insulating layer covering the substrate and the transfer gate, a first hydrogen blocking layer disposed on the first interlayer insulating layer, a first active pattern disposed on the first hydrogen blocking layer and including a metal oxide doped with nitrogen, a first gate disposed on the first active pattern, a second interlayer insulating layer covering the first gate and the first active pattern, and upper source/drain contacts penetrating the second interlayer insulating layer and contacting the first active pattern at two sides of the first gate.

    IMAGE SENSOR
    4.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20240145514A1

    公开(公告)日:2024-05-02

    申请号:US18237278

    申请日:2023-08-23

    CPC classification number: H01L27/14634 H01L27/14636 H01L27/1469

    Abstract: An image sensor includes a first chip and a second chip. The first chip includes a first substrate including photoelectric conversion parts and a back-side insulating layer covering a first surface of the first substrate. The second chip, which is disposed adjacent the first chip, includes circuits configured to drive the first chip. The back-side insulating layer may include a fixed-charge layer, a refractive index adjusting layer, and a capping layer, which are sequentially disposed on the first surface of the first substrate. The refractive index adjusting layer may include a first element, a second element, and oxygen. A conduction band minimum of an oxide of the second element may be higher than a conduction band minimum of an oxide of the first element.

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