公开(公告)号：US20230407174A1

公开(公告)日：2023-12-21

申请号：US18194875

申请日：2023-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung HWANG ,  Byungjoon KANG ,  Daihyun KIM ,  Hwang Suk KIM ,  Mihyun PARK ,  Jingmin OH ,  Hyosan LEE ,  Byoungki CHOI ,  Ham CHEOL

IPC: C09K13/00 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/32134 ,  H01L21/31111

Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.