公开(公告)号：US20230407174A1

公开(公告)日：2023-12-21

申请号：US18194875

申请日：2023-04-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuyoung HWANG ,  Byungjoon KANG ,  Daihyun KIM ,  Hwang Suk KIM ,  Mihyun PARK ,  Jingmin OH ,  Hyosan LEE ,  Byoungki CHOI ,  Ham CHEOL

IPC: C09K13/00 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/00 ,  H01L21/32134 ,  H01L21/31111

Abstract: Provided are an etching composition including an oxidizing agent, an ammonium salt, an aqueous solvent, and an accelerator, a method of preparing a metal-containing film etching by using the same, and a method of manufacturing a semiconductor device by using the same.

公开(公告)号：US20190284701A1

公开(公告)日：2019-09-19

申请号：US16139506

申请日：2018-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soojin KIM ,  Hyo-Sun LEE ,  Jung-Min OH ,  Hyosan LEE ,  Donghyun KIM ,  Haksoo KIM ,  Jung Jae OH ,  Myung Ho LEE

IPC: C23C22/48 ,  C09K13/08 ,  C09K13/06 ,  H01L21/3213 ,  H01L21/02

Abstract: A pre-treatment composition for use before etching SiGe includes an acid, an alcohol, and a silane compound having a chemical formula R—Si(R1)n(OR2)3-n in which R is (C3-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C3-C20)alkyl, or (C3-C20)alkyl(C6-C12)aryl, R1 is hydrogen, hydroxyl, halogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, R2 is hydrogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, n is an integer of 0 to 2, and the alkyl, aryl, arylalkyl, or alkylaryl of R, and the alkyl, haloalkyl, aryl, arylalkyl, or alkylaryl of R1 may be further substituted with at least one substituent selected from halogen, hydroxyl, —N(R11)(R12), and —S(R13), where each of the R11, the R12 and the R13 is independently hydrogen or (C1-C20)alkyl.

公开(公告)号：US20140141616A1

公开(公告)日：2014-05-22

申请号：US14086426

申请日：2013-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: H01L21/321 ,  H01L21/02

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20240318078A1

公开(公告)日：2024-09-26

申请号：US18586037

申请日：2024-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungjoon KANG ,  Sungmin KIM ,  Minjae SUNG ,  Gayoung SONG ,  Jungmin OH ,  Hyosan LEE ,  Byoungki CHOI ,  Cheol HAM ,  Kyuyoung HWANG

IPC: C09K13/06 ,  H01L21/3213

CPC classification number: C09K13/06 ,  H01L21/32134

Abstract: An etching composition for a titanium-containing layer may include an oxidant, an inorganic acid, and a selective etching inhibitor. The inorganic acid may include phosphorus-based inorganic acid, chlorine-based inorganic acid, or fluorine-based inorganic acid, or any combination thereof. The selective etching inhibitor may include a polymer having a nitrogen-containing repeating unit.

公开(公告)号：US20230272280A1

公开(公告)日：2023-08-31

申请号：US18098847

申请日：2023-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun PARK ,  Jaesung LEE ,  Junghun LIM ,  Jungmin OH ,  Sangwon BAE ,  Hyosan LEE

IPC: C09K13/10 ,  H01L21/306 ,  H10B12/00 ,  C09K13/08

CPC classification number: C09K13/10 ,  C09K13/08 ,  H01L21/30604 ,  H10B12/05 ,  H10B12/30

Abstract: An etchant composition for etching a silicon germanium film includes, based on a total weight of the etchant composition, about 5 wt% to about 14 wt% of an oxidant, about 0.01 wt% to about 5 wt% of a fluorine compound, about 0.01 wt% to about 5 wt% of an amine compound, about 0.01 wt% to about 1 wt% of an alcohol compound having a hydrophilic head and a hydrophobic tail, about 60 wt% to about 90 wt% of an organic solvent, and a balance of water. A method of manufacturing an integrated circuit device includes: forming, on a substrate, a structure in which a plurality of silicon films and a plurality of silicon germanium films are alternately stacked; and selectively removing the plurality of silicon germanium films by using the etchant composition.

公开(公告)号：US20230272278A1

公开(公告)日：2023-08-31

申请号：US18081899

申请日：2022-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changjun PARK ,  Jaesung LEE ,  Junghun LIM ,  Mihyun PARK ,  Sangwon BAE ,  Jungmin OH ,  Hyosan LEE

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/3205

CPC classification number: C09K13/06 ,  H01L21/32134 ,  H01L21/76883 ,  H01L21/32051

Abstract: An etching composition for etching a molybdenum film, the etching composition includes about 0.1 wt % to about 5 wt % of an oxidant; about 10 wt % to about 40 wt % of a chelate agent, the chelate agent including a mineral acid; about 0.01 wt % to about 3 wt % of a corrosion inhibitor, the corrosion inhibitor including an ammonium salt, an amine compound, or a combination thereof; and an organic solvent, all wt % being based on a total weight of the etching composition.

公开(公告)号：US20210403756A1

公开(公告)日：2021-12-30

申请号：US17354403

申请日：2021-06-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inkwon KIM ,  Yearin BYUN ,  Boyun KIM ,  Seungho PARK ,  Hyosan LEE

IPC: C09G1/02

Abstract: A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition including an organic polishing booster including an iminium cation; a carrier; and optionally including inorganic polishing particles, wherein, when included, the inorganic polishing particles are included in the slurry composition in an amount of less than 0.1% by weight, based on a total weight of the slurry composition.

公开(公告)号：US20200152486A1

公开(公告)日：2020-05-14

申请号：US16420776

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Hoo KIM ,  Kuntack LEE ,  Yong-Jhin CHO ,  Chawon KOH ,  Sunghyun PARK ,  Hyosan LEE ,  Ji Hoon CHA ,  Soo Young CHOI

IPC: H01L21/67 ,  H01L21/02

Abstract: Disclosed are substrate drying methods, photoresist developing methods, and/or photolithography methods. The substrate drying method including providing a drying liquid on a substrate, increasing a pressure of the drying liquid to produce a supercritical fluid, and removing the supercritical fluid to dry the substrate may be provided.

公开(公告)号：US20150287590A1

公开(公告)日：2015-10-08

申请号：US14669354

申请日：2015-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min OH ,  Yongsun KO ,  Kwangsu KIM ,  SeokHoon KIM ,  ChangSup MUN ,  Kuntack LEE ,  Hyosan LEE ,  Jihoon JEONG ,  Yong-Jhin CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/76224 ,  H01L27/10852 ,  H01L27/11582

Abstract: Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that rinse solution remaining on the pattern is diluted to have a concentration below 2 percent by weight based on a weight of the rinse solution remaining on the pattern and the supercritical carbon dioxide; and venting the supercritical carbon dioxide such that the dry chamber is maintained at atmospheric pressure to dry the substrate where the pattern is formed.

Abstract translation: 提供了一种冲洗和干燥半导体器件的方法，包括在衬底上形成图案; 使用冲洗溶液冲洗形成图案的基底; 将基板装载到干燥室中; 将超临界二氧化碳注射到干燥室中，使得保留在图案上的冲洗溶液基于残留在图案上的冲洗溶液的重量和超临界二氧化碳被稀释至具有低于2重量％的浓度; 并排出超临界二氧化碳，使得干燥室保持在大气压下，以干燥形成图案的基板。

公开(公告)号：US20230332015A1

公开(公告)日：2023-10-19

申请号：US18096231

申请日：2023-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Inkwon KIM ,  Yearin Byun ,  Sangkyun KIM ,  Boun YOON ,  Hyosan LEE

IPC: H01L21/768 ,  C09G1/02 ,  C09G1/04 ,  H01L21/321

CPC classification number: C09G1/02 ,  C09G1/04 ,  H01L21/3212 ,  H01L21/7684 ,  H01L21/76843

Abstract: A slurry composition for polishing metal and a method of manufacturing an integrated circuit device, the slurry composition includes a first organic polishing booster including a cationic polymer salt that includes a quaternary ammonium cation; a second organic polishing booster including an organic acid; an oxidizer; a pH adjuster; 0 wt% to about 0.1 wt% of an inorganic abrasive; and water.