公开(公告)号：US11799497B2

公开(公告)日：2023-10-24

申请号：US17744635

申请日：2022-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong Woo Lee ,  Sang Jin Yoo ,  Hee-Woong Kang ,  Kwang Woo Lee ,  Hee Won Lee

IPC: H03M13/00 ,  H03M13/11 ,  G11C7/10 ,  G11C29/52

CPC classification number: H03M13/1111 ,  G11C7/1039 ,  G11C29/52 ,  H03M13/1151

Abstract: A method for operating a storage controller includes receiving a first read command, performing a first read of data stored in a nonvolatile memory using a first read level and receiving a first read data, performing first error correction decoding of the first read data to determine whether the first error correction decoding succeeds, determining a second read level using a predetermined method, and determining a first soft decision offset value of the second read level, reading data stored in the nonvolatile memory using the determined second read level and the first soft decision offset value and receiving a first soft decision data, performing second error correction decoding of the first soft decision data to determine whether the second error correction decoding succeeds, and storing the second read level, a first method used to determine the second read level and the first soft decision offset value.

公开(公告)号：US11189354B2

公开(公告)日：2021-11-30

申请号：US16826558

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang Woo Lee ,  Chan Ha Kim ,  Hee Won Lee

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/14 ,  G11C16/26

Abstract: A nonvolatile memory device capable of minimizing monitoring overhead associated with read disturb is provided. The nonvolatile memory device includes a memory cell array which includes a first cell string comprising a plurality of memory cells connected in series, wherein the plurality of memory cells includes a first monitoring cell, a first memory cell, and a second memory cell, and a row decoder which provides a first read voltage to the first memory cell and a first monitoring voltage to the first monitoring cell when reading the first memory cell among the memory cells and provides the first read voltage to the second memory cell and a second monitoring voltage different from the first monitoring voltage to the first monitoring cell when reading the second memory cell.

公开(公告)号：US20210057033A1

公开(公告)日：2021-02-25

申请号：US16826558

申请日：2020-03-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwang Woo Lee ,  Chan Ha Kim ,  Hee Won Lee

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/08 ,  G11C16/14

Abstract: A nonvolatile memory device capable of minimizing monitoring overhead associated with read disturb is provided. The nonvolatile memory device includes a memory cell array which includes a first cell string comprising a plurality of memory cells connected in series, wherein the plurality of memory cells includes a first monitoring cell, a first memory cell, and a second memory cell, and a row decoder which provides a first read voltage to the first memory cell and a first monitoring voltage to the first monitoring cell when reading the first memory cell among the memory cells and provides the first read voltage to the second memory cell and a second monitoring voltage different from the first monitoring voltage to the first monitoring cell when reading the second memory cell.

公开(公告)号：US11599302B2

公开(公告)日：2023-03-07

申请号：US16829660

申请日：2020-03-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong Woo Lee ,  Chan Ha Kim ,  Kang Ho Roh ,  Kwang Woo Lee ,  Hee Won Lee

IPC: G06F12/00 ,  G06F3/06 ,  G06F11/07 ,  G06F11/30 ,  G06F9/455 ,  G06K9/62 ,  G06N20/00

Abstract: A storage device, including a feature information database configured to store feature information about a memory device; and a machine learning module configured to select a machine learning model from a plurality of machine learning models the corresponding to an operation of the memory device based on the feature information, wherein the memory device is configured to operate according to the selected machine learning model.