公开(公告)号：US10304887B2

公开(公告)日：2019-05-28

申请号：US15862396

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-seok Kim ,  Byung-jun Park ,  Hee-geun Jeong ,  Seung-joo Nah

IPC: H01L27/146

Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.

公开(公告)号：US11081513B2

公开(公告)日：2021-08-03

申请号：US16856571

申请日：2020-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-seok Kim ,  Byung-jun Park ,  Hee-geun Jeong ,  Seung-joo Nah

IPC: H01L27/146

Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.

公开(公告)号：US11508771B2

公开(公告)日：2022-11-22

申请号：US17240120

申请日：2021-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-han Han ,  Sun-hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Gyeong-hee Lee ,  Hee-geun Jeong

IPC: H01L27/146 ,  H01L21/00 ,  H01L23/522

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

公开(公告)号：US10991742B2

公开(公告)日：2021-04-27

申请号：US16558820

申请日：2019-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-han Han ,  Sun-Hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Gyeong-hee Lee ,  Hee-geun Jeong

IPC: H01L27/146 ,  H01L21/00 ,  H01L23/522

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.