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公开(公告)号:US10304887B2
公开(公告)日:2019-05-28
申请号:US15862396
申请日:2018-01-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Han-seok Kim , Byung-jun Park , Hee-geun Jeong , Seung-joo Nah
IPC: H01L27/146
Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.
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公开(公告)号:US11081513B2
公开(公告)日:2021-08-03
申请号:US16856571
申请日:2020-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Han-seok Kim , Byung-jun Park , Hee-geun Jeong , Seung-joo Nah
IPC: H01L27/146
Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.
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公开(公告)号:US11508771B2
公开(公告)日:2022-11-22
申请号:US17240120
申请日:2021-04-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dae-han Han , Sun-hyun Kim , Han-seok Kim , Chung-ho Song , Gyeong-hee Lee , Hee-geun Jeong
IPC: H01L27/146 , H01L21/00 , H01L23/522
Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.
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公开(公告)号:US10991742B2
公开(公告)日:2021-04-27
申请号:US16558820
申请日:2019-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dae-han Han , Sun-Hyun Kim , Han-seok Kim , Chung-ho Song , Gyeong-hee Lee , Hee-geun Jeong
IPC: H01L27/146 , H01L21/00 , H01L23/522
Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.
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