公开(公告)号：US10304887B2

公开(公告)日：2019-05-28

申请号：US15862396

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-seok Kim ,  Byung-jun Park ,  Hee-geun Jeong ,  Seung-joo Nah

IPC: H01L27/146

Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.

公开(公告)号：US20200066784A1

公开(公告)日：2020-02-27

申请号：US16671876

申请日：2019-11-01

Applicant: Samsung Electronics Co.,Ltd.

Inventor： Sun-hyun KIM ,  Han-seok Kim ,  Chung-ho Song ,  Jin-ju Jeon

IPC: H01L27/146 ,  H01L23/544

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.

公开(公告)号：US10483317B2

公开(公告)日：2019-11-19

申请号：US15835626

申请日：2017-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Jin-ju Jeon

IPC: H01L27/146 ,  H01L23/544

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.

公开(公告)号：US11081513B2

公开(公告)日：2021-08-03

申请号：US16856571

申请日：2020-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Han-seok Kim ,  Byung-jun Park ,  Hee-geun Jeong ,  Seung-joo Nah

IPC: H01L27/146

Abstract: A substrate includes a plurality of pixels arranged in a two-dimensional array structure and has a front side and a back side opposite to the front side. An interconnection is arranged on the front side of the substrate. An insulating layer, a color filter, and a micro-lens are arranged on the back side of the substrate. A pixel separation structure is disposed in the substrate. The pixel separation structure includes a conductive layer having a grid structure in a planar view of the image sensor and surrounds each of the plurality of pixels. A back side contact is vertically overlapped with and electrically connected to a grid point portion of the grid structure of the conductive layer of the pixel separation structure.

公开(公告)号：US10797099B2

公开(公告)日：2020-10-06

申请号：US16671876

申请日：2019-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Jin-ju Jeon

IPC: H01L27/146 ,  H01L23/544

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.

公开(公告)号：US11508771B2

公开(公告)日：2022-11-22

申请号：US17240120

申请日：2021-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-han Han ,  Sun-hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Gyeong-hee Lee ,  Hee-geun Jeong

IPC: H01L27/146 ,  H01L21/00 ,  H01L23/522

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

公开(公告)号：US10991742B2

公开(公告)日：2021-04-27

申请号：US16558820

申请日：2019-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-han Han ,  Sun-Hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Gyeong-hee Lee ,  Hee-geun Jeong

IPC: H01L27/146 ,  H01L21/00 ,  H01L23/522

Abstract: An image sensor includes a semiconductor substrate having a first surface and a second surface, a pixel element isolation film extending through an interior of the semiconductor substrate and defining a plurality of active pixels in the semiconductor substrate, and a dummy element isolation film extending through the interior of the semiconductor substrate and extending along at least one side of the active pixels in a plan view and defining a plurality of dummy pixels in the semiconductor substrate. The pixel element isolation film may have a first end that is substantially coplanar with the first surface and has a first width in a first direction parallel to the first surface, and the dummy element isolation film has a first end that is substantially coplanar with the first surface and has a second width that is greater than the first width of the pixel element isolation film.

公开(公告)号：US20180182808A1

公开(公告)日：2018-06-28

申请号：US15835626

申请日：2017-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sun-hyun Kim ,  Han-seok Kim ,  Chung-ho Song ,  Jin-ju Jeon

IPC: H01L27/146 ,  H01L23/544

Abstract: The present disclosure provides an image sensor and a method of manufacturing the same. An image sensor includes a first substrate, a barrier structure, a first structure, a second substrate, and a second structure. The first substrate includes a device region in which unit pixels are disposed and a first residual scribe lane region surrounding the device region. The first substrate has a first surface and a second surface. The barrier structure penetrates the first substrate in the first residual scribe lane region. The first surface of the first substrate is on the first structure. The second substrate includes a second residual scribe lane region facing the first residual scribe lane region. The second substrate has a front surface and a rear surface. The second structure is on the front surface of the second substrate and faces the first surface of the first substrate. The second structure is bonded to the first structure.