公开(公告)号：US20150130027A1

公开(公告)日：2015-05-14

申请号：US14538100

申请日：2014-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se jun PARK ,  Ho jun KIM ,  Jaihyung WON ,  Gyuwan CHOI ,  Dohyung KIM

IPC: H01L21/308 ,  H01L21/311 ,  H01L29/06 ,  H01L21/033

CPC classification number: H01L21/0332 ,  C23C16/26 ,  C23C16/50 ,  H01L21/02118 ,  H01L21/02274

Abstract: A method of forming a carbon-containing thin film and a method of manufacturing a semiconductor device using the method of forming the carbon-containing thin film are described. The method of forming a carbon-containing thin film includes the steps of introducing a substrate into a chamber, injecting hydrocarbon gas and at least nitrogen gas simultaneously into the chamber, and depositing a carbon-containing thin film including carbon and nitrogen on the substrate, thereby forming a carbon-containing thin film having high selectivity and uniform thickness.

Abstract translation: 描述了形成含碳薄膜的方法和使用形成含碳薄膜的方法制造半导体器件的方法。 形成含碳薄膜的方法包括以下步骤：将基材引入室中，同时将烃气体和至少氮气注入到室中，以及在基板上沉积包含碳和氮的含碳薄膜， 从而形成具有高选择性和均匀厚度的含碳薄膜。