公开(公告)号：US20190088656A1

公开(公告)日：2019-03-21

申请号：US15959366

申请日：2018-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong Hyun KIM ,  Seung Pil KO ,  Hyunchul SHIN ,  Kilho LEE

IPC: H01L27/105 ,  G11C11/16 ,  H01L43/02

Abstract: Disclosed are data storage devices and methods of manufacturing the same. The methods may include providing a substrate including a cell region and a peripheral circuit region, forming a data storage layer on the cell region and the peripheral circuit region of the substrate, selectively forming a mask layer on a portion of the data storage layer that is formed on the peripheral circuit region, forming a top electrode layer on the data storage layer and the mask layer, patterning the top electrode layer to form a plurality of top electrodes on the cell region, and patterning the data storage layer using the plurality of top electrodes as an etch mask to form a plurality of data storage parts on the cell region. While patterning the top electrode layer, the mask layer on the peripheral circuit region may serve as an etch stop layer.