公开(公告)号：US09859393B2

公开(公告)日：2018-01-02

申请号：US15401659

申请日：2017-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-suk Tak ,  Tae-jong Lee ,  Hyun-seung Kim ,  Bon-young Koo ,  Ki-yeon Park ,  Gi-gwan Park ,  Mi-seon Park

IPC: H01L29/76 ,  H01L29/49 ,  H01L23/535 ,  H01L21/768 ,  H01L23/532 ,  H01L29/78 ,  H01L21/8234

CPC classification number: H01L29/4983 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5329 ,  H01L23/535 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7855 ,  H01L29/7856

Abstract: A device includes: a gate line on an active region of a substrate, a pair of source/drain regions in the active region on both sides of the gate line, a contact plug on at least one source/drain region out of the pair of source/drain regions; and a multilayer-structured insulating spacer between the gate line and the contact plug. The multilayer-structured insulating spacer may include an oxide layer, a first carbon-containing insulating layer covering a first surface of the oxide layer adjacent to the gate line, and a second carbon-containing insulating layer covering a second surface of the oxide layer, opposite to the first surface of the oxide layer, adjacent to the contact plug.

公开(公告)号：US20170222014A1

公开(公告)日：2017-08-03

申请号：US15401659

申请日：2017-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-suk Tak ,  Tae-jong Lee ,  Hyun-seung Kim ,  Bon-young Koo ,  Ki-yeon Park ,  Gi-gwan Park ,  Mi-seon Park

IPC: H01L29/49 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L29/4983 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76895 ,  H01L21/823425 ,  H01L21/823468 ,  H01L21/823475 ,  H01L23/485 ,  H01L23/5329 ,  H01L23/535 ,  H01L29/41791 ,  H01L29/66795 ,  H01L29/7855 ,  H01L29/7856

Abstract: A device includes: a gate line on an active region of a substrate, a pair of source/drain regions in the active region on both sides of the gate line, a contact plug on at least one source/drain region out of the pair of source/drain regions; and a multilayer-structured insulating spacer between the gate line and the contact plug. The multilayer-structured insulating spacer may include an oxide layer, a first carbon-containing insulating layer covering a first surface of the oxide layer adjacent to the gate line, and a second carbon-containing insulating layer covering a second surface of the oxide layer, opposite to the first surface of the oxide layer, adjacent to the contact plug.