公开(公告)号：US09865495B2

公开(公告)日：2018-01-09

申请号：US15220094

申请日：2016-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Il Kim ,  Gi-Gwan Park ,  Jung-Gun You ,  Hyung-Dong Kim ,  Sug-Hyun Sung ,  Myung-Yoon Um

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L27/11

CPC classification number: H01L21/76229 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7853

Abstract: A method of fabricating a semiconductor device includes forming a plurality of mask patterns comprising a real mask pattern and a dummy mask pattern on a substrate, removing the dummy mask pattern and etching the substrate using the real mask pattern as a mask to form a first trench, a second trench, and a fin-type pattern defined by the first trench and the second trench. The second trench contacting the fin-type pattern comprises a smooth pattern which is convex and positioned between a bottom surface and a side surface of the second trench, a first concave portion which is positioned between the side surface of the second trench and the smooth pattern, and a second concave portion which is positioned between the convex portion and the bottom surface of the second trench.

公开(公告)号：US20170133264A1

公开(公告)日：2017-05-11

申请号：US15220094

申请日：2016-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Il Kim ,  Gi-Gwan Park ,  Jung-Gun You ,  Hyung-Dong Kim ,  Sug-Hyun Sung ,  Myung-Yoon Um

IPC: H01L21/762 ,  H01L27/11 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L21/76229 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7853

Abstract: A method of fabricating a semiconductor device includes forming a plurality of mask patterns comprising a real mask pattern and a dummy mask pattern on a substrate, removing the dummy mask pattern and etching the substrate using the real mask pattern as a mask to form a first trench, a second trench, and a fin-type pattern defined by the first trench and the second trench. The second trench contacting the fin-type pattern comprises a smooth pattern which is convex and positioned between a bottom surface and a side surface of the second trench, a first concave portion which is positioned between the side surface of the second trench and the smooth pattern, and a second concave portion which is positioned between the convex portion and the bottom surface of the second trench.