公开(公告)号：US09711504B2

公开(公告)日：2017-07-18

申请号：US15155744

申请日：2016-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Ki-Il Kim ,  Gi-Gwan Park ,  Sug-Hyun Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823431 ,  H01L27/0207 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

Abstract: A semiconductor device includes a substrate including a first trench, a first fin pattern on the substrate that is defined by the first trench, a gate electrode on the substrate, and a field insulating layer on the substrate. The first fin pattern includes an upper part on a lower part. The first fin pattern includes a first sidewall and a second sidewall opposite each other. The first sidewall is concave along the lower part of the first fin pattern. The second sidewall is tilted along the lower part of the first fin pattern. The field insulating layer surrounds the lower part of the first fin pattern. The gate electrode surrounds the upper part of the first fin pattern.

公开(公告)号：US20200219875A1

公开(公告)日：2020-07-09

申请号：US16820853

申请日：2020-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423

Abstract: A semiconductor device -is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.

公开(公告)号：US20190081043A1

公开(公告)日：2019-03-14

申请号：US16189296

申请日：2018-11-13

Applicant: Samsung Electronics Co., Ltd

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

Abstract: A semiconductor device is provided. The semiconductor device includes a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film and includes a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern, wherein a height from the substrate to a lowest part of the first portion is different from a height from the substrate to a lowest part of the second portion.

公开(公告)号：US09865495B2

公开(公告)日：2018-01-09

申请号：US15220094

申请日：2016-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Il Kim ,  Gi-Gwan Park ,  Jung-Gun You ,  Hyung-Dong Kim ,  Sug-Hyun Sung ,  Myung-Yoon Um

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L27/11

CPC classification number: H01L21/76229 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7853

Abstract: A method of fabricating a semiconductor device includes forming a plurality of mask patterns comprising a real mask pattern and a dummy mask pattern on a substrate, removing the dummy mask pattern and etching the substrate using the real mask pattern as a mask to form a first trench, a second trench, and a fin-type pattern defined by the first trench and the second trench. The second trench contacting the fin-type pattern comprises a smooth pattern which is convex and positioned between a bottom surface and a side surface of the second trench, a first concave portion which is positioned between the side surface of the second trench and the smooth pattern, and a second concave portion which is positioned between the convex portion and the bottom surface of the second trench.

公开(公告)号：US11600711B2

公开(公告)日：2023-03-07

申请号：US17329240

申请日：2021-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Myung-Yoon Um ,  Young-Joon Park ,  Jeong-Hyo Lee ,  Ji-Yong Ha ,  Jun-sun Hwang

IPC: H01L29/423 ,  H01L29/78 ,  H01L21/28 ,  H01L29/40 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/49

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

公开(公告)号：US11043568B2

公开(公告)日：2021-06-22

申请号：US16220028

申请日：2018-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Myung-Yoon Um ,  Young-Joon Park ,  Jeong-Hyo Lee ,  Ji-Yong Ha ,  Jun-sun Hwang

IPC: H01L29/423 ,  H01L29/78 ,  H01L21/28 ,  H01L29/40 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/8238 ,  H01L27/088 ,  H01L29/49

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin protruding upwardly from a substrate and extending in a first direction and a gate structure extending in a second direction intersecting to cross the active fin, where a first width of a lower portion of the gate structure that contacts the active fin is greater than a second width of the lower portion of the gate structure that is spaced apart from the active fin.

公开(公告)号：US10157917B2

公开(公告)日：2018-12-18

申请号：US14974805

申请日：2015-12-18

Applicant: Samsung Electronics Co., Ltd

Inventor： Jung-Gun You ,  Se-Wan Park ,  Baik-Min Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

Abstract: A semiconductor device is provided. The semiconductor device may include a field insulating film on a substrate, a first fin type pattern which is formed on the substrate and protrudes upward from an upper surface of the field insulating film, and a gate electrode which intersects with the first fin type pattern on the field insulating film. The gate electrode may include a first portion and a second portion, the first portion being located on one side of the first fin type pattern and including a first terminal end of the gate electrode, and the second portion being located on the other side of the first fin type pattern. A height from the substrate to a lowest part of the first portion may be different than a height from the substrate to a lowest part of the second portion.

公开(公告)号：US20170133264A1

公开(公告)日：2017-05-11

申请号：US15220094

申请日：2016-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Il Kim ,  Gi-Gwan Park ,  Jung-Gun You ,  Hyung-Dong Kim ,  Sug-Hyun Sung ,  Myung-Yoon Um

IPC: H01L21/762 ,  H01L27/11 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L21/76229 ,  H01L27/1104 ,  H01L29/0653 ,  H01L29/66795 ,  H01L29/7843 ,  H01L29/7853

Abstract: A method of fabricating a semiconductor device includes forming a plurality of mask patterns comprising a real mask pattern and a dummy mask pattern on a substrate, removing the dummy mask pattern and etching the substrate using the real mask pattern as a mask to form a first trench, a second trench, and a fin-type pattern defined by the first trench and the second trench. The second trench contacting the fin-type pattern comprises a smooth pattern which is convex and positioned between a bottom surface and a side surface of the second trench, a first concave portion which is positioned between the side surface of the second trench and the smooth pattern, and a second concave portion which is positioned between the convex portion and the bottom surface of the second trench.

公开(公告)号：US20170047326A1

公开(公告)日：2017-02-16

申请号：US15155744

申请日：2016-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun YOU ,  Ki-Il Kim ,  Gi-Gwan Park ,  Sug-Hyun Sung ,  Myung-Yoon Um

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823431 ,  H01L27/0207 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/7854

Abstract: A semiconductor device includes a substrate including a first trench, a first fin pattern on the substrate that is defined by the first trench, a gate electrode on the substrate, and a field insulating layer on the substrate. The first fin pattern includes an upper part on a lower part. The first fin pattern includes a first sidewall and a second sidewall opposite each other. The first sidewall is concave along the lower part of the first fin pattern. The second sidewall is tilted along the lower part of the first fin pattern. The field insulating layer surrounds the lower part of the first fin pattern. The gate electrode surrounds the upper part of the first fin pattern.

Abstract translation: 半导体器件包括：衬底，包括第一沟槽，由第一沟槽限定的衬底上的第一鳍图案，衬底上的栅电极和衬底上的场绝缘层。 第一鳍状图案包括下部的上部。 第一翅片图案包括彼此相对的第一侧壁和第二侧壁。 第一侧壁沿着第一鳍片图案的下部是凹形的。 第二侧壁沿着第一翅片图案的下部倾斜。 场绝缘层围绕第一鳍片图案的下部。 栅极电极围绕第一鳍片图案的上部。