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公开(公告)号：USD1020798S1
公开(公告)日：2024-04-02
申请号：US29897309
申请日：2023-07-13
Applicant: Samsung Electronics Co., Ltd.
Designer： Sunghyo Jeong , Hyunjin Shin
Abstract: The FIGURE is a front view of a display screen or portion thereof with graphical user interface, showing our new design.
The outer perimeter broken lines in the FIGURE depict a display screen or portion thereof and form no part of the claimed design. The remaining broken lines in the FIGURE depict portions of the graphical user interface that form no part of the claimed design.-
公开(公告)号：USD1016852S1
公开(公告)日：2024-03-05
申请号：US29782867
申请日：2021-05-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Designer： Sunghyo Jeong , Hyunjin Shin
Abstract: The FIGURE is a front view of a display screen or portion thereof with graphical user interface, showing our new design.
The outer perimeter broken lines in the FIGURE depict a display screen or portion thereof and form no part of the claimed design. The remaining broken lines in the FIGURE depict portions of the graphical user interface that form no part of the claimed design.-
Patent Agency Ranking
公开(公告)号：US20230396160A1
公开(公告)日：2023-12-07
申请号：US18097226
申请日：2023-01-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sanggyeong Won , Hyunjin Shin
Abstract: A semiconductor device includes a plurality of memory cells, and a peripheral circuit configured to control the plurality of memory cells. The peripheral circuit includes a temperature compensation circuit configured to output a compensation current determined based on a temperature of the semiconductor device, a voltage regulator configured to regulate a pump voltage having a level determined based on the compensation current, a clock generator configured to generate a clock signal having a frequency determined based on the compensation current; and a charge pump circuit including a level shifter, configured to output a control signal adjusted a swing level of the control signal based on the clock signal and the pump voltage, and a plurality of unit circuits, each of the plurality of unit circuits including a plurality of pumping capacitors configured to be charged and discharged by the control signal.
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公开(公告)号：US11587622B2
公开(公告)日：2023-02-21
申请号：US17326397
申请日：2021-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunjin Shin , Dohui Kim , Sanggyeong Won
Abstract: A memory device includes a memory cell array, a voltage switching circuit configured to switch a plurality of voltages provided to the memory cell array in response to a switching control signal, a discharge circuit configured to discharge the voltage switching circuit in response to a discharge signal, and a control circuit configured to generate the switching control signal based on a command and a high voltage enable signal received from outside of the memory device. The voltage switching circuit includes a high voltage switching circuit, and a low voltage switching circuit. The control circuit is configured to generate the discharge signal based on the command and an activated high voltage enable signal responsive to detecting external abortion while performing an operation corresponding to the command from among a program operation and an erase operation.
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公开(公告)号：US11487410B2
公开(公告)日：2022-11-01
申请号：US16963416
申请日：2019-01-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chaekyung Lee , Hyun Kim , Joonwon Park , Hyunjin Shin
IPC: G06F3/04842 , G06F3/04817 , G06Q20/34 , G06Q20/32
Abstract: An electronic device and its operating method according to various embodiments, may detect information related to an electronic card, based on a preset condition, display a graphic user interface to include a first area displaying the electronic card and a second area displaying an icon associated with the information around the first are, detect selection of the icon in the second area, and display the information in the first area.
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公开(公告)号：US12191763B2
公开(公告)日：2025-01-07
申请号：US18097226
申请日：2023-01-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sanggyeong Won , Hyunjin Shin
Abstract: A semiconductor device includes a plurality of memory cells, and a peripheral circuit configured to control the plurality of memory cells. The peripheral circuit includes a temperature compensation circuit configured to output a compensation current determined based on a temperature of the semiconductor device, a voltage regulator configured to regulate a pump voltage having a level determined based on the compensation current, a clock generator configured to generate a clock signal having a frequency determined based on the compensation current; and a charge pump circuit including a level shifter, configured to output a control signal adjusted a swing level of the control signal based on the clock signal and the pump voltage, and a plurality of unit circuits, each of the plurality of unit circuits including a plurality of pumping capacitors configured to be charged and discharged by the control signal.
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公开(公告)号：US20210391015A1
公开(公告)日：2021-12-16
申请号：US17326397
申请日：2021-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyunjin Shin , Dohui Kim , Sanggyeong Won
Abstract: A memory device includes a memory cell array, a voltage switching circuit configured to switch a plurality of voltages provided to the memory cell array in response to a switching control signal, a discharge circuit configured to discharge the voltage switching circuit in response to a discharge signal, and a control circuit configured to generate the switching control signal based on a command and a high voltage enable signal received from outside of the memory device. The voltage switching circuit includes a high voltage switching circuit, and a low voltage switching circuit. The control circuit is configured to generate the discharge signal based on the command and an activated high voltage enable signal responsive to detecting external abortion while performing an operation corresponding to the command from among a program operation and an erase operation.
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