-
1.
公开(公告)号:US20200070300A1
公开(公告)日:2020-03-05
申请号:US16268753
申请日:2019-02-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Eun Kyung HONG , Nam Il KOO , Ji Min LEE , Sung Hyup KIM , Sang Yeon OH , Ik Seon JEON , Ji Min CHOI
IPC: B24B37/013 , B24B49/12
Abstract: A chemical mechanical polishing apparatus includes a polishing head, including a polishing head body, a membrane attached to a lower portion of the polishing head body, and a reflector disposed between the polishing head body and the membrane, a platen including an opening, an emitter disposed below the opening of the platen, the emitter configured to emit terahertz waves, a detector disposed below the opening of the platen, the detector configured to receive the terahertz waves emitted by the emitter and reflected by the reflector, and an analyzer configured to analyze an electrical signal generated by converting the terahertz waves received by the detector, the analyzer configured to determine a polishing end point.
-
公开(公告)号:US20210025832A1
公开(公告)日:2021-01-28
申请号:US16846978
申请日:2020-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Tae-Heung AHN , Racine NASSAU , Su Hwan PARK , Ki Wan SEO , Nam Il KOO , In Keun BAEK , Jong Min YOON , Ik Seon JEON
IPC: G01N21/95
Abstract: Provided is an apparatus for measuring a wafer. The apparatus may include a chuck disposed on a stage and a plate connected with the stage, a horizontal frame configured to support a wafer, and a vertical frame connecting the plate and the horizontal frame. The apparatus may further include first to third adsorption portions connected with the horizontal frame and configured to adsorb the wafer, a support bar penetrating through the chuck and extending in a first direction and a beam irradiator connected to the support bar and disposed between the plate and the horizontal frame. The beam irradiator may be configured to irradiate a beam on the wafer. The apparatus may further include a detector on an opposite side of the horizontal frame from the beam irradiator and configured to receive the beam after it has penetrated through the wafer.
-