公开(公告)号：US20230317532A1

公开(公告)日：2023-10-05

申请号：US17987132

申请日：2022-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Il Geun JUNG ,  Sung Jin KIM ,  Sang-Ki KIM ,  Joong Won SHIN ,  Sung Yun WOO ,  Sang Hyeon JEON ,  Ji Min CHOI

IPC: H01L21/66 ,  H01L23/00 ,  H01L25/065

CPC classification number: H01L22/32 ,  H01L24/06 ,  H01L25/0657 ,  H01L2224/06515 ,  H01L2224/0401 ,  H01L2224/02373 ,  H01L2224/13155 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/13144 ,  H01L24/13 ,  H01L2224/13111

Abstract: A semiconductor device includes a substrate with first and second surfaces, a first test pad on the first surface of the substrate, a first bump pad on the first surface of the substrate and spaced apart from the first test pad in a first direction, a second bump pad on the first surface of the substrate and spaced apart from the first bump pad, a second test pad on the first surface of the substrate and spaced apart from the second bump pad in the first direction, a first wiring layer in the first direction and electrically connecting the first test pad to the first bump pad, a second wiring layer in the first direction, spaced apart from the first wiring layer, and electrically connecting the second test pad to the second bump pad, and a first bump connected to each of the first and second bump pads.

公开(公告)号：US20200070300A1

公开(公告)日：2020-03-05

申请号：US16268753

申请日：2019-02-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung HONG ,  Nam Il KOO ,  Ji Min LEE ,  Sung Hyup KIM ,  Sang Yeon OH ,  Ik Seon JEON ,  Ji Min CHOI

IPC: B24B37/013 ,  B24B49/12

Abstract: A chemical mechanical polishing apparatus includes a polishing head, including a polishing head body, a membrane attached to a lower portion of the polishing head body, and a reflector disposed between the polishing head body and the membrane, a platen including an opening, an emitter disposed below the opening of the platen, the emitter configured to emit terahertz waves, a detector disposed below the opening of the platen, the detector configured to receive the terahertz waves emitted by the emitter and reflected by the reflector, and an analyzer configured to analyze an electrical signal generated by converting the terahertz waves received by the detector, the analyzer configured to determine a polishing end point.

公开(公告)号：US20180158718A1

公开(公告)日：2018-06-07

申请号：US15667118

申请日：2017-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG RYUL LEE ,  Joong Chan SHIN ,  Dong Jun LEE ,  Ho Ouk LEE ,  Ji Min CHOI ,  Ji Young KIM ,  Chan Sic YOON ,  Chang Hyun CHO

IPC: H01L21/764 ,  H01L21/768 ,  H01L29/06 ,  H01L29/49 ,  H01L23/522

CPC classification number: H01L21/764 ,  H01L21/7682 ,  H01L21/76897 ,  H01L23/522 ,  H01L27/10814 ,  H01L27/10852 ,  H01L27/10894 ,  H01L29/0649 ,  H01L29/4983

Abstract: A method for fabricating a semiconductor device includes providing a substrate including a cell region including a bit line structure, a bit line spacer and a lower electrode and a peripheral circuit region including first to third impurity regions, forming an interlayer insulating film on the peripheral circuit region, forming a first metal layer on the interlayer insulating film, forming a first trench and a second trench in the first metal layer between the first and second impurity regions, the second trench is disposed between the second and third impurity regions and exposes the interlayer insulating film, forming a first capping pattern on the first trench to form an air gap in the first trench, filling the second trench with a first insulating material, and forming, on the first metal layer, a contact connected to the third impurity region.