公开(公告)号：US11721581B2

公开(公告)日：2023-08-08

申请号：US17031279

申请日：2020-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Chan Gwak ,  Hwi Chan Jun ,  Heon Jong Shin ,  So Ra You ,  Sang Hyun Lee ,  In Chan Hwang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/45 ,  H01L29/775

CPC classification number: H01L21/76897 ,  H01L23/528 ,  H01L23/5226 ,  H01L23/5283 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/456 ,  H01L29/775 ,  H01L29/785

Abstract: A semiconductor device includes active regions, a gate electrode, respective drain regions, respective source regions, a drain contact structure, a source contact structure, and a gate contact structure. The active regions extend linearly in parallel on a substrate. The gate electrode crosses the active regions. The drain regions are on and/or in the active regions on a first side of the gate electrode. The respective source regions are on and/or in the active regions on a second side of the gate electrode. The drain contact structure is on multiple drain regions. The source contact structure is on multiple source regions. The gate contact structure is on the gate electrode between the drain and source contact structures. The gate contact structure includes a gate plug and an upper gate plug directly on the gate plug. A center of the gate contact structure overlies only one of the active regions.

公开(公告)号：US10553484B2

公开(公告)日：2020-02-04

申请号：US15959783

申请日：2018-04-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Chan Gwak ,  Hwi Chan Jun ,  Heon Jong Shin ,  So Ra You ,  Sang Hyun Lee ,  In Chan Hwang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a plurality of active regions spaced apart from each other and extending linearly in parallel on a substrate. A gate electrode crosses the plurality of active regions, and respective drain regions are on and/or in respective ones of the active regions on a first side of the gate electrode and respective source regions are on and/or in respective ones of the active regions on a second side of the gate electrode. A drain plug is disposed on the drain regions and a source plug is disposed on the source regions. A gate plug is disposed on the gate electrode between the drain plug and the source plug such that a straight line passing through a center of the drain plug and a center of the source plug intersects the gate plug.

公开(公告)号：US10818549B2

公开(公告)日：2020-10-27

申请号：US16724483

申请日：2019-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Chan Gwak ,  Hwi Chan Jun ,  Heon Jong Shin ,  So Ra You ,  Sang Hyun Lee ,  In Chan Hwang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L29/45 ,  H01L29/775

Abstract: A semiconductor device includes active regions, a gate electrode, respective drain regions, respective source regions, a drain contact structure, a source contact structure, and a gate contact structure. The active regions extend linearly in parallel on a substrate. The gate electrode crosses the active regions. The drain regions are on and/or in the active regions on a first side of the gate electrode. The respective source regions are on and/or in the active regions on a second side of the gate electrode. The drain contact structure is on multiple drain regions. The source contact structure is on multiple source regions. The gate contact structure is on the gate electrode between the drain and source contact structures. The gate contact structure includes a gate plug and an upper gate plug directly on the gate plug. A center of the gate contact structure overlies only one of the active regions.