公开(公告)号：US20170121820A1

公开(公告)日：2017-05-04

申请号：US15289619

申请日：2016-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  JongCheol Lee ,  MinHwa Jung ,  Jaechul Shin ,  In-Sun Yi ,  Geunkyu Choi ,  Jungil Ahn ,  Seung Han Lee ,  Jin Pil Heo

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45563

Abstract: A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.

公开(公告)号：US10822694B2

公开(公告)日：2020-11-03

申请号：US16104311

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  Bongjin Kuh ,  Kook Tae Kim ,  In-Sun Yi ,  Soojin Hong

IPC: C23C16/44 ,  C23C16/458 ,  C23C16/455

Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

公开(公告)号：US20190055647A1

公开(公告)日：2019-02-21

申请号：US16104311

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  Bongjin Kuh ,  Kook Tae Kim ,  In-Sun Yi ,  Soojin Hong

IPC: C23C16/44 ,  C23C16/458

CPC classification number: C23C16/4408 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45578 ,  C23C16/4584

Abstract: Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.