公开(公告)号：US10526706B2

公开(公告)日：2020-01-07

申请号：US15485433

申请日：2017-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk Jin Chung ,  Jong Cheol Lee ,  Jae chul Shin ,  Min Hwa Jung ,  Jin Pil Heo

IPC: C23C16/458 ,  C23C16/455 ,  C23C16/44 ,  H01L21/687 ,  H01L21/02 ,  H01J37/32

Abstract: A gas supply unit includes a base plate, a plurality of gas supply regions protruding from the base plate and arranged on the base plate in a circumferential direction, and a plurality of sidewall trenches alternating with the gas supply regions on the base plate. A distance between opposing surfaces of the base plate increases in a radial direction from a center of the base plate in each of the plurality of sidewall trenches, so each of the plurality of sidewall trenches has a depth that decreases in the radial direction from the center of the base plate.

公开(公告)号：US20170121820A1

公开(公告)日：2017-05-04

申请号：US15289619

申请日：2016-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sukjin Chung ,  JongCheol Lee ,  MinHwa Jung ,  Jaechul Shin ,  In-Sun Yi ,  Geunkyu Choi ,  Jungil Ahn ,  Seung Han Lee ,  Jin Pil Heo

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45563

Abstract: A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.