公开(公告)号：US20150357162A1

公开(公告)日：2015-12-10

申请号：US14730460

申请日：2015-06-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Won Kim ,  In-Sup Shin

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01J37/32091 ,  H01L21/00 ,  H01L21/67333

Abstract: A jig comprises a base constructed and arranged to be exposed to plasma for etching a native oxide layer on electronic devices. A pocket structure is on an upper surface of the base. The pocket structure includes pockets constructed and arranged to receive the electronic devices, The pocket structure has at least one passageway through which the plasma is moved in a horizontal direction between the pockets.

Abstract translation: 夹具包括构造和布置为暴露于等离子体的基底，用于蚀刻电子器件上的自然氧化物层。 口袋结构位于基座的上表面上。 口袋结构包括构造和布置成容纳电子装置的口袋。口袋结构具有至少一个通道，等离子体通过该通道沿水平方向在口袋之间移动。