公开(公告)号：US20190148521A1

公开(公告)日：2019-05-16

申请号：US16170842

申请日：2018-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho JO ,  Dae Joung KIM ,  Jae Mun KIM ,  Moon Han PARK ,  Tae Ho CHA ,  Jae Jong HAN

IPC: H01L29/66 ,  H01L21/02

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.

公开(公告)号：US20210098626A1

公开(公告)日：2021-04-01

申请号：US16910819

申请日：2020-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bum KIM ,  Gyeom KIM ,  Da Hye KIM ,  Jae Mun KIM ,  Il Gyou SHIN ,  Seung Hun LEE ,  Kyung In CHOI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US20220123145A1

公开(公告)日：2022-04-21

申请号：US17565650

申请日：2021-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Bum KIM ,  Gyeom KIM ,  Da Hye KIM ,  Jae Mun KIM ,  Il Gyou SHIN ,  Seung Hun LEE ,  Kyung In CHOI

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: Example semiconductor devices and methods for fabricating a semiconductor device are disclosed. An example device may include a substrate, a first semiconductor pattern spaced apart from the substrate, a first antioxidant pattern extending along a bottom surface of the first semiconductor pattern and spaced apart from the substrate, and a field insulating film on the substrate. The insulating film may cover at least a part of a side wall of the first semiconductor pattern. The first antioxidant pattern may include a first semiconductor material film doped with a first impurity.

公开(公告)号：US20200243398A1

公开(公告)日：2020-07-30

申请号：US16848228

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gun Ho JO ,  Dae Joung KIM ,  Jae Mun KIM ,  Moon Han PARK ,  Tae Ho CHA ,  Jae Jong HAN

IPC: H01L21/8238 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L21/84 ,  H01L21/8234 ,  H01L29/786

Abstract: A method for fabricating a semiconductor device includes forming a fin type pattern protruding from a substrate and extending in a first direction, forming a field insulating layer covering a limited portion of the fin type pattern on the substrate such that the field insulating layer exposes a separate limited portion of the fin type pattern, forming a gate structure on the field insulating layer and the fin type pattern, the gate structure extending in a second direction, the second direction different from the first direction, forming a first barrier layer containing a nitrogen element in a first region of the field insulating layer, wherein the first region is exposed by the gate structure, adjacent to the gate structure and extending in the second direction and forming a gate spacer on the first barrier layer and on a side wall of the gate structure.