公开(公告)号：US10512184B2

公开(公告)日：2019-12-17

申请号：US15956037

申请日：2018-04-18

Applicant: Samsung Electronics Co., Ltd

Inventor： Jae Myung Cho ,  Jae Woo Kim

IPC: H05K5/06 ,  G06F1/16 ,  H04M1/02 ,  H04M1/18 ,  H05K5/00 ,  H05K5/03

Abstract: An electronic device is disclosed. The electronic device includes a housing comprising a first face, a second face that faces opposite the first face, and a side face that encloses a space between the first face and the second face. The electronic device also includes a front plate disposed on the first face of the housing, and a display disposed between at least a partial region of the front plate and the first face, and comprises a first and a second layer. The electronic device further includes at least one first seal member disposed between an edge portion of the display and the first face, and at least one second seal member disposed between an edge portion of the front plate and the first face. The electronic device also includes a waterproof filler applied to fill a step region formed between the first seal member and the second seal member.

公开(公告)号：US20190043768A1

公开(公告)日：2019-02-07

申请号：US15895208

申请日：2018-02-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Se Jin Oh ,  Yu Sin Kim ,  Jae Woo Kim ,  Jin Young Bang ,  Doug Yong Sung ,  In Yong Hwang

IPC: H01L21/66 ,  H01L21/027 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  G03F7/09

Abstract: Methods for fabricating semiconductor devices are provided including forming a stacked structure including a first mold layer and a second mold layer on a substrate; forming a first photoresist pattern on the stacked structure; etching the second mold layer using the first photoresist pattern as a mask; forming a second photoresist pattern by etching a portion of the first photoresist pattern; measuring a first fringe signal generated by an interference phenomenon between first reflected lights reflected from the first photoresist pattern; forming a stepped structure by etching the second mold layer and the first mold layer which is exposed, using the second photoresist pattern as a mask; measuring a second fringe signal generated by an interference phenomenon between second reflected lights reflected from the second mold layer; calculating a third fringe signal by summing the first fringe signal and the second fringe signal; calculating and a first etch rate of an upper surface of the first photoresist pattern using the third fringe signal; calculating a second etch rate of a side surface of the first photoresist pattern using the first etch rate; and controlling a degree of etching the side surface of the second photoresist pattern using the second etch rate.