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公开(公告)号:US20230180477A1
公开(公告)日:2023-06-08
申请号:US18161331
申请日:2023-01-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaehyun YANG , Bio KIM , Yujin KIM , Kyong-won AN , Sookyeom YONG , Junggeun LEE , Youngjun CHEON
Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.
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公开(公告)号:US20200091186A1
公开(公告)日:2020-03-19
申请号:US16379063
申请日:2019-04-09
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jaehyun YANG , Bio Kim , Yujin Kim , Kyong-Won An , Sookyeom Yong , Junggeun Jee , Youngjun Cheon
IPC: H01L27/11582 , H01L27/11524 , H01L27/11556 , H01L27/1157
Abstract: A three-dimensional semiconductor memory device is provided. The device may include a first stack structure on a substrate including a cell array region and a connection region, a second stack structure on the first stack structure, a first vertical channel hole penetrating the first stack structure and partially exposing the substrate and a bottom surface of the second stack structure, on the cell array region, a second vertical channel hole penetrating the second stack structure and exposing the first vertical channel hole, on the cell array region, a bottom diameter of the second vertical channel hole being smaller than an top diameter of the first vertical channel hole, and a buffer pattern placed in the first vertical channel hole and adjacent to the bottom surface of the second stack structure.
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